2SK2671
Abstract: F5F90HVX2 100MJ
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2671 F5F90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 900V 5A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2671
F5F90HVX2
FTO-220
100mJ
2SK2671
F5F90HVX2
100MJ
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2SK2671
Abstract: equivalent 2sk2671 F5F90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2671 F5F90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2671
F5F90HVX2
FTO-220
100mJ
2SK2671
equivalent 2sk2671
F5F90HVX2
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2sk2671
Abstract: No abstract text available
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2671 F5F90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 900V 5A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2671
F5F90HVX2
FTO-220
100mJ
2sk2671
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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2SK4111
Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:
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2SK258
O-204AA/TO-3
2SK259
2SK258H
O-218
2SK695
2SK695A
2SK4111
2SK4110
2SK4106
2sk4112
2sk2671
2sk4113
2SK2648
2N5121
2N5160 equivalent
2SK2666
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2sk2671
Abstract: No abstract text available
Text: H V X -ÏÏ5 /U -X M 7 -M 0 S F E T H V X-n SERIES POWER MOSFET • ¿ M & T fäB I O U T L IN E D IM E N S IO N S 2SK2671 F5F90HVX2 ■ fc te m R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item h 3d ^ im i s ■ C h an n e l T e m p e ra tu re KV
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2SK2671
F5F90HVX2)
10/iS,
2sk2671
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Untitled
Abstract: No abstract text available
Text: HVX-IIvU-X /t7-M0SFET '. H O L M H -3 -V * J k HVX-II SERIES POWER MOSFET ' O U T L IN E D IM E N S IO N S 2SK2671 F5F90H V X2 900v 5a I Æ fêS i R A TIN G S liS Ê ÎÎÎi^ S ê f ë m Absolute Maximum R atings Item (T c = 2 5 “C) is n a 0kC o n d itio nfts
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2SK2671
F5F90H
F5F90HVX2)
I00\/
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2SK2674
Abstract: No abstract text available
Text: Power MOSFETs HVX-II series N-Channel, Enhancement type I, ^¿y E-pack SMD Surface Mount Cis3 (typ) R dS(ON) V dss Id Pt .i ' j . . .JA I. . 2SK2663 2SK2665 2SK2670 900 1 3 5 . m Tch V gss (max) . ivi . .L'ÌL . _
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STO-220
2SK2663
2SK2665
2SK2670
STO-220
Fig30-45-4
2SK2333
2SK2664
2SK2674
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Untitled
Abstract: No abstract text available
Text: C H A R A C TE R IS TIC S • N -f- ji > / n> X ^ > hfti| 0 9 N-channel, enhancement structure. • A C i s s ¡Jf/h il» . 9 Low input capacitance. Particularly low in the zero bias. • + 9 Low on-state resistance. Example ' It is 0.7f2(m ax.) at 2SK2192,
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2SK2192,
2SK2671.
2SK2192
2SK2671
AC100V
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Untitled
Abstract: No abstract text available
Text: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100
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61-4SMD)
O-220
IT0-220
2SK1533
FT0-220
FTO-220
ST0-220
67SMD)
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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2SK2188
Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
2SK2188
F10W90HVX2
2SK2669
2SK2196
F20w
FP7W90HVX2
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ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
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SI4466DY
SI4966DY
SI9925DY
SI9942DY
2SK1388
T0220AB
IRF7319
IRF7413
IRF7455
IRL2203N
ixfh26n60q
2SK2333
2SK2761
IRF1405
BUZ345
BSS89
irfp250n
P9NB60
irfp260n
2sk2671
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