bq4010
Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
bq4010
bq4010LY
bq4010MA-150
bq4010MA-200
bq4010MA-70
bq4010MA-85
bq4010Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|
bq4010
Abstract: bq4010LY bq4010Y DIP-28
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED APRIL 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
34-Pin
bq401BATCAP
536-bit
bq4010
bq4010LY
bq4010Y
DIP-28
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|
BQ4010YMA-150N
Abstract: bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y BQ4010YMA-150
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
BQ4010YMA-150N
bq4010
bq4010LY
bq4010MA-150
bq4010MA-200
bq4010MA-70
bq4010MA-85
bq4010Y
BQ4010YMA-150
|
PDF
|
BQ4010YMA-150N
Abstract: BQ4010YMA-200
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
BQ4010YMA-150N
BQ4010YMA-200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|
bq4010
Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y BQ4010YMA-85
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
bq4010
bq4010LY
bq4010MA-150
bq4010MA-200
bq4010MA-70
bq4010MA-85
bq4010Y
BQ4010YMA-85
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
|
Original
|
bq4010/Y/LY
SLUS116A
28-Pin
536-bit
|
PDF
|