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    SPP08N50C3 Search Results

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    SPP08N50C3 Price and Stock

    Infineon Technologies AG SPP08N50C3XKSA1

    MOSFET N-CH 560V 7.6A TO220-3
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    DigiKey SPP08N50C3XKSA1 Tube
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    Rochester Electronics SPP08N50C3XKSA1 22,195 1
    • 1 $0.8889
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    • 100 $0.8356
    • 1000 $0.7556
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    Win Source Electronics SPP08N50C3XKSA1 6,700
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    • 100 $1.131
    • 1000 $0.754
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    Rochester Electronics LLC SPP08N50C3XKSA1

    SPP08N50 - 800V COOLMOS N-CHANNE
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    DigiKey SPP08N50C3XKSA1 Bulk 325
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    Others SPP08N50C3

    AVAILABLE EU
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    ComSIT USA SPP08N50C3 4,500
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    Infineon Technologies AG SPP08N50C3

    COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SPP08N50C3 6,376
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    Win Source Electronics SPP08N50C3 6,750
    • 1 -
    • 10 -
    • 100 $1.131
    • 1000 $0.754
    • 10000 $0.754
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    SPP08N50C3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP08N50C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP08N50C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 500.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.6 A; IDpuls (max): 22.8 A; Original PDF
    SPP08N50C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 7.6A TO-220AB Original PDF

    SPP08N50C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    08n50c3

    Abstract: sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 08n50c3 sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 PDF

    08n50c3

    Abstract: SPA08N50C3 PG-TO220-3-31 SPI08N50C3 SPP08N50C3 Q67040-S4567
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262 PG-TO220 • Extreme dv/dt rated


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220-3-31 PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: SPP08N50C3 08n50c3 SPA08N50C3 SPI08N50C3 SPP08N50C3 Q67040-S4567 PDF

    08n50c3

    Abstract: SPI08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 PG-TO-220-3-31: SPP08N50C3 08n50c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 • Extreme dv/dt rated


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 PG-TO-220-3-31: SPP08N50C3 PDF

    08N50C3

    Abstract: AN-TO220-3-31-01 SPA08N50C3 SPI08N50C3 SPP08N50C3 47 6v 08n50 application note AN-TO220-3-31-01 Q67040-S4567
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP08N50C3 08N50C3 AN-TO220-3-31-01 SPA08N50C3 SPI08N50C3 SPP08N50C3 47 6v 08n50 application note AN-TO220-3-31-01 Q67040-S4567 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 PDF

    CS270125

    Abstract: TDA4863 application note pin connection ic tda4863 pfc TDA4863 evaluation board tda4863 equivalent pfc TDA4863 230V AC to 5V DC ic tda4863 DCM 7 DIODE pfc pwm evaluation board
    Text: Application Note Version 1.0 160W PFC Evaluation Board with DCM PFC controller TDA4863-2 and CoolMOS SPP08N50C3 Power Management & Supply TDA4863-2 SPP08N50C3 <DocNumber> Ver1.0, April 2004_doc_release> Never stop thinking. 160W PFC Evaluation Board with DCM PFC


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    TDA4863-2 SPP08N50C3 TDA4863-2 TDA4863 CS270125 TDA4863 application note pin connection ic tda4863 pfc TDA4863 evaluation board tda4863 equivalent pfc TDA4863 230V AC to 5V DC ic DCM 7 DIODE pfc pwm evaluation board PDF

    08N50C3

    Abstract: SPI08N50C3 P-TO-220-3-31 SPA08N50C3 SPP08N50C3 08N50
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP08N50C3 08N50C3 SPI08N50C3 P-TO-220-3-31 SPA08N50C3 SPP08N50C3 08N50 PDF

    08n50c3

    Abstract: 08n50 SPA08N50C3 SPI08N50C3 SPP08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


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    SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 08n50c3 08n50 SPA08N50C3 SPI08N50C3 SPP08N50C3 PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


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    Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


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    SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP PDF

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


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    MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020 PDF

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


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    B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 PDF

    Buck-Boost Converter advantages

    Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
    Text: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.


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    B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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