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    SPP08N50C3 Price and Stock

    Infineon Technologies AG SPP08N50C3XKSA1

    MOSFET N-CH 560V 7.6A TO220-3
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    DigiKey SPP08N50C3XKSA1 Tube
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    Avnet Americas SPP08N50C3XKSA1 Tube 4 Weeks 391
    • 1 $0.9333
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    • 100 $0.8356
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    Rochester Electronics SPP08N50C3XKSA1 22,195 1
    • 1 $0.9333
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    Win Source Electronics SPP08N50C3XKSA1 6,700
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    • 1000 $0.754
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    Rochester Electronics LLC SPP08N50C3XKSA1

    SPP08N50 - 800V COOLMOS N-CHANNE
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    DigiKey SPP08N50C3XKSA1 Bulk 325
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    Infineon Technologies AG SPP08N50C3

    COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SPP08N50C3 6,344
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    Chip1Stop SPP08N50C3 495
    • 1 $4.29
    • 10 $4.29
    • 100 $1.76
    • 1000 $1.76
    • 10000 $1.76
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    Win Source Electronics SPP08N50C3 6,750
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    • 100 $1.131
    • 1000 $0.754
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    SPP08N50C3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP08N50C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP08N50C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 500.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.6 A; IDpuls (max): 22.8 A; Original PDF
    SPP08N50C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 7.6A TO-220AB Original PDF

    SPP08N50C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    08n50c3

    Abstract: sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 08n50c3 sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3

    08n50c3

    Abstract: SPA08N50C3 PG-TO220-3-31 SPI08N50C3 SPP08N50C3 Q67040-S4567
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220-3-31 PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: SPP08N50C3 08n50c3 SPA08N50C3 SPI08N50C3 SPP08N50C3 Q67040-S4567

    08n50c3

    Abstract: SPI08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 PG-TO-220-3-31: SPP08N50C3 08n50c3

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 PG-TO-220-3-31: SPP08N50C3

    08N50C3

    Abstract: AN-TO220-3-31-01 SPA08N50C3 SPI08N50C3 SPP08N50C3 47 6v 08n50 application note AN-TO220-3-31-01 Q67040-S4567
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP08N50C3 08N50C3 AN-TO220-3-31-01 SPA08N50C3 SPI08N50C3 SPP08N50C3 47 6v 08n50 application note AN-TO220-3-31-01 Q67040-S4567

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3

    CS270125

    Abstract: TDA4863 application note pin connection ic tda4863 pfc TDA4863 evaluation board tda4863 equivalent pfc TDA4863 230V AC to 5V DC ic tda4863 DCM 7 DIODE pfc pwm evaluation board
    Text: Application Note Version 1.0 160W PFC Evaluation Board with DCM PFC controller TDA4863-2 and CoolMOS SPP08N50C3 Power Management & Supply TDA4863-2 SPP08N50C3 <DocNumber> Ver1.0, April 2004_doc_release> Never stop thinking. 160W PFC Evaluation Board with DCM PFC


    Original     		PDF TDA4863-2 SPP08N50C3 TDA4863-2 TDA4863 CS270125 TDA4863 application note pin connection ic tda4863 pfc TDA4863 evaluation board tda4863 equivalent pfc TDA4863 230V AC to 5V DC ic DCM 7 DIODE pfc pwm evaluation board

    08N50C3

    Abstract: SPI08N50C3 P-TO-220-3-31 SPA08N50C3 SPP08N50C3 08N50
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP08N50C3 08N50C3 SPI08N50C3 P-TO-220-3-31 SPA08N50C3 SPP08N50C3 08N50

    08n50c3

    Abstract: 08n50 SPA08N50C3 SPI08N50C3 SPP08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 08n50c3 08n50 SPA08N50C3 SPI08N50C3 SPP08N50C3

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3

    Buck-Boost Converter advantages

    Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
    Text: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.


    Original     		PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF