SQ1470AEH Search Results
SQ1470AEH Datasheets (1)
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| SQ1470AEH-T1_GE3 |
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Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 2.8A SC70 | Original | 297.62KB |
SQ1470AEH Datasheets Context Search
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Contextual Info: SQ1470AEH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 30 RDS(on) () at VGS = 4.5 V 0.065 RDS(on) () at VGS = 2.5 V 0.095 ID (A) • AEC-Q101 qualified • 100 % Rg and UIS tested |
Original |
SQ1470AEH AEC-Q101 OT-363 SC-70 SC-70 SQ1470AEH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SQ1470AEH_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SQ1470AEH AN609, 6227u 1423u 6071m 0284u 7101m 1748m 8686m 13-Apr-15 | |
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Contextual Info: SPICE Device Model SQ1470AEH www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
SQ1470AEH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |