SQJ410EP-T1-GE3
Abstract: No abstract text available
Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ410EP
AEC-Q101
SQJ410EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQJ410EP-T1-GE3
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Untitled
Abstract: No abstract text available
Text: SQJ410EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQJ410EP
AN609,
5072m
4090m
1436m
9402m
1095m
1706m
3627m
5485m
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Untitled
Abstract: No abstract text available
Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A)
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SQJ410EP
AEC-Q101
2002/95/EC
SQJ410EP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ410EP
AEC-Q101
SQJ410EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET
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SQJ410EP
2002/95/EC
AEC-Q101
SQJ410EP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A)
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SQJ410EP
AEC-Q101
2002/95/EC
SQJ410EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQJ410EP www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQJ410EP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET
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SQJ410EP
2002/95/EC
AEC-Q101
SQJ410EP-T1-GE3
11-Mar-11
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DPAK/TO-252
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the
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Ups-2726
VMN-PL0469-1311
DPAK/TO-252
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SQJ469ep
Abstract: SQ4483BE
Text: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of
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AEC-Q101
AEC-Q101
TS-16949
VMN-MS6925-1406
SQJ469ep
SQ4483BE
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sq4435
Abstract: SQP120N10-09
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.
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VMN-PL0469-1505
sq4435
SQP120N10-09
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SQ2315ES
Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects
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AEC-Q101
O-262,
O-263)
VMN-SG2151-1009
SQ2315ES
SQ2319ES
SQM120P04-04L
SQ2360EES
SQ3456EV
SQJ848EP
SQ2301ES
sQj980ep
sq9945bey
sqm10
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VMN-SG2151-1406
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param
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AEC-Q101
VMN-SG2151-1406
VMN-SG2151-1406
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/
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AEC-Q101
VMN-SG2151-1212
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