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    SQJ848EP Price and Stock

    Vishay Siliconix SQJ848EP-T1_GE3

    MOSFET N-CH 40V 47A PPAK SO-8
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    DigiKey SQJ848EP-T1_GE3 Digi-Reel 2,694 1
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    SQJ848EP-T1_GE3 Cut Tape 2,694 1
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    SQJ848EP-T1_GE3 Reel 3,000
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    Vishay Intertechnologies SQJ848EP-T1_GE3

    Trans MOSFET N-CH 40V 21.7A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ848EP-T1_GE3)
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    Avnet Americas SQJ848EP-T1_GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SQJ848EP-T1_GE3 2,880
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    EBV Elektronik SQJ848EP-T1_GE3 26 Weeks 3,000
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    Vishay Intertechnologies SQJ848EP-T1-GE3

    MOSFETs RECOMMENDED ALT SQJ8
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    TTI SQJ848EP-T1-GE3 Reel 3,000 3,000
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    Chip 1 Exchange SQJ848EP-T1-GE3 1,510
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    SQJ848EP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQJ848EP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 47A PPAK 8SOIC Original PDF
    SQJ848EP-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 47A POWERPAKSO-8 Original PDF

    SQJ848EP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SQJ848EP Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		PDF SQJ848EP 2002/95/EC AEC-Q101 SQJ848EP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0075 RDS(on) () at VGS = 4.5 V 0.0120 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested


    Original     		PDF SQJ848EP AEC-Q101 SQJ848EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested


    Original     		PDF SQJ848EP AEC-Q101 SQJ848EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested


    Original     		PDF SQJ848EP AEC-Q101 SQJ848EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ848EP Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		PDF SQJ848EP 2002/95/EC AEC-Q101 SQJ848EP-T1-GE3 11-Mar-11

    SQJ848EP

    Abstract: No abstract text available
    Text: SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.009 RDS(on) (Ω) at VGS = 4.5 V 0.012 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQJ848EP AEC-Q101 2002/95/EC SQJ848EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ848EP

    AN609

    Abstract: SQJ848EP
    Text: SQJ848EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQJ848EP AN609, 05-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: SQJ848EP Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		PDF SQJ848EP 2002/95/EC AEC-Q101 SQJ848EP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.009 RDS(on) (Ω) at VGS = 4.5 V 0.012 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQJ848EP AEC-Q101 2002/95/EC SQJ848EP-T1-GE3 11-Mar-11

    SQJ848EP

    Abstract: sqj848ep-t1-ge3
    Text: SQJ848EP Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		PDF SQJ848EP 2002/95/EC AEC-Q101 SQJ848EP-T1-GE3 18-Jul-08 SQJ848EP sqj848ep-t1-ge3

    Untitled

    Abstract: No abstract text available
    Text: SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ848EP AEC-Q101 SQJ848EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


    Original     		PDF Ups-2726 VMN-PL0469-1311 DPAK/TO-252

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


    Original     		PDF AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/


    Original     		PDF AEC-Q101 VMN-SG2151-1212