SQS840EN Search Results
SQS840EN Datasheets (1)
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ECAD Model |
Manufacturer |
Description |
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SQS840EN-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 16A TO263 | Original | 644.97KB |
SQS840EN Price and Stock
Vishay Siliconix SQS840EN-T1_BE3N-CHANNEL 40-V (D-S) 175C MOSFET |
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SQS840EN-T1_BE3 | Digi-Reel | 8,928 | 1 |
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Vishay Siliconix SQS840EN-T1_GE3MOSFET N-CH 40V 12A PPAK1212-8 |
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SQS840EN-T1_GE3 | Digi-Reel | 1,763 | 1 |
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Vishay Intertechnologies SQS840EN-T1_BE3Transistor MOSFET N-CH 40V 12A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SQS840EN-T1_BE3) |
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SQS840EN-T1_BE3 | Reel | 15 Weeks | 3,000 |
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SQS840EN-T1_BE3 |
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SQS840EN-T1_BE3 | Bulk | 3,000 |
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Vishay Intertechnologies SQS840EN-T1_GE3Trans MOSFET N-CH 40V 12A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SQS840EN-T1_GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQS840EN-T1_GE3 | Reel | 15 Weeks | 3,000 |
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SQS840EN-T1_GE3 | 2,959 |
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SQS840EN-T1_GE3 | 17 Weeks | 3,000 |
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SQS840EN-T1_GE3 | 16 Weeks | 3,000 |
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Vishay Intertechnologies SQS840EN-T1-GE3MOSFETs RECOMMENDED ALT SQS8 |
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SQS840EN-T1-GE3 | Reel | 3,000 |
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SQS840EN Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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Contextual Info: SQS840EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 40 RDS(on) () at VGS = 10 V 0.0166 RDS(on) () at VGS = 4.5 V 0.0219 ID (A) • AEC-Q101 qualified d |
Original |
SQS840EN AEC-Q101 SQS840EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQS840EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 40 RDS(on) (Ω) at VGS = 10 V 0.0200 RDS(on) (Ω) at VGS = 4.5 V 0.0300 ID (A) • AEC-Q101 qualified d • 100 % Rg and UIS tested |
Original |
SQS840EN AEC-Q101 SQS840EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQS840EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 40 RDS(on) () at VGS = 10 V 0.0166 RDS(on) () at VGS = 4.5 V 0.0219 ID (A) • AEC-Q101 qualified d |
Original |
SQS840EN AEC-Q101 SQS840EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SQS840EN www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SQS840EN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQS840EN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQS840EN AN609, 7539m 9700u 4956m 2681u 4813m 3297m 3418u 23-Apr-13 | |
Contextual Info: Vishay Intertechnology, Inc. Automotive Body Electronics One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components AUTOMOTIVE Automotive Body Electronics More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
Original |
NTCS6030E3. SQS840EN AEC-Q200 AEC-Q101 AEC-Q200-qualified VMN-MS6980-1411-AUBO | |
sq4435
Abstract: SQP120N10-09
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Original |
VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 |