Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001733^ T3T «SIIGK N-CHANNEL POW ER M O SFETS SSP3N70 SSH3N70 FEATURES • • • • • • • Low er Ros ON Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lys ilico n g a te ce ll s tru c tu re

SSH3N70

Abstract: ssh15n55a SSH20N50A SSH8N60 SSH15N60A SSH20N45A ssh20n50 IRFP453 IRFP452 IRFP451
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-3P NCHANNEL Continued BVdss(V) ID(onXA) 400.00 5.00 5.50 8.00 10.00 13.00 15.00 25.00 25.00 1.50 1.00 0.80 0.55 0.40 0.30 0.20 0.25 IRFP332 IRFP330 IRFP342 IRFP340 IRFP352 IRFP350 SSH25N40A SSH25N40 450.00 4.00 4.50 7.00 8.00

1XYS

Abstract: 1RL630 1rlz44 IRLZ20 1RFZ40 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Id (tnA) Coss Crss ft & m % Vg s =0 (max) ♦ t y p Vg s (V) (0) max Ciss *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF)

IRLZ20

Abstract: 1rlz44 1RL640 SSH3N70 SSH5N40 SSH6N70A IRL631 IRL641 IRLZ10 IRLZ24
Contextual Info: - 1§y £ *± n 13=25*0 f Vds Vg s Id Ig s s Pt> V g s th ID SS * * hDs(on) Vd s = ft ft Vdg ♦ /CH (V) (A) (V) * /CH Vg s Vd s (V) (V) (nA) m (UA) min ma x (V) (V) Id (on) g fs Uss lo s s Crss (*typ) (*typ) (max) (max) (pF) (pF) (*typ) (max) (pF) V g s =0