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    ST25164 Price and Stock

    STMicroelectronics ST25164DM1TR/A

    2KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8 (Also Known As: ST25164DM1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ST25164DM1TR/A 787
    • 1 $1.05
    • 10 $1.05
    • 100 $0.49
    • 1000 $0.4375
    • 10000 $0.4375
    		Buy Now
    ST25164DM1TR/A 787
    • 1 $1.05
    • 10 $1.05
    • 100 $0.49
    • 1000 $0.4375
    • 10000 $0.4375
    		Buy Now

    STMicroelectronics ST25164DM6TR/A

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange ST25164DM6TR/A 7,473
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    ST25164 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ST25164 STMicroelectronics SERIAL I2C EEPROM Original PDF
    ST25164B1 SGS-Thomson EEPROM Serial Original PDF
    ST25164B3 SGS-Thomson EEPROM Serial Original PDF
    ST25164B6 SGS-Thomson EEPROM Serial Original PDF
    ST25164DB3 SGS-Thomson EEPROM Serial Original PDF
    ST25164DB6 SGS-Thomson EEPROM Serial Original PDF
    ST25164DM3 SGS-Thomson EEPROM Serial Original PDF
    ST25164DM6 SGS-Thomson EEPROM Serial Original PDF
    ST25164M1 SGS-Thomson EEPROM Serial Original PDF
    ST25164M3 SGS-Thomson EEPROM Serial Original PDF
    ST25164M6 SGS-Thomson EEPROM Serial Original PDF

    ST25164 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ST24164

    Abstract: ST25164 b2416 MSO8
    Text: ST24164 ST25164 16Kb x8 SERIAL EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE


    Original     		PDF ST24164 ST25164 ST24164 ST25164 150mil ST24/25164 AI01249 b2416 MSO8

    ST24164

    Abstract: AN404 M24164 ST25164 ST2416
    Text: ST24164 ST25164 16Kb x8 SERIAL EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE


    Original     		PDF ST24164 ST25164 ST24164 ST25164 M24164 150mil ST24/25164 AN404 M24164 ST2416

    Untitled

    Abstract: No abstract text available
    Text: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE


    Original     		PDF ST24164 ST25164 ST25164 150mil ST24/25164 AI01249

    AN404

    Abstract: ST24164 ST25164
    Text: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE


    Original     		PDF ST24164 ST25164 ST24164 ST25164 ST24/25164 AN404

    ST24164

    Abstract: No abstract text available
    Text: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE


    Original     		PDF ST24164 ST25164 ST25164 150mil ST24/25164

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    ST24C02

    Abstract: ST24C08 m24c02 ST24W02 equivalent AN995 ST24C01 ST24C04 ST24W01 M24C32-W ST24W04
    Text: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01


    Original     		PDF AN995 ST24xxx ST25xxx M24xxx ST24C01 ST24W01 ST25C01 ST25W01 ST24C02 ST24C08 m24c02 ST24W02 equivalent AN995 ST24C01 ST24C04 ST24W01 M24C32-W ST24W04

    asm eagle

    Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
    Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:


    Original     		PDF BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860

    Replacement for

    Abstract: AN995 ST24W01 ST24C01 ST24C02 ST24C04 ST24C08 ST24W02 ST24W04 ST24W08
    Text: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01


    Original     		PDF AN995 ST24xxx ST25xxx M24xxx ST24C01 ST24W01 ST25C01 ST25W01 Replacement for AN995 ST24W01 ST24C01 ST24C02 ST24C04 ST24C08 ST24W02 ST24W04 ST24W08

    ST24C16

    Abstract: AN995 ST24C01 ST24C02 ST24C04 ST24C08 ST24W01 ST24W02 ST24W04 ST24W08
    Text: AN995 APPLICATION NOTE Replacing ST24xxx and ST25xxx by M24xxx Devices This document is written for users of the following ranges of EEPROM device: Table 1. Discontinued Ranges Vcc = 4.5 to 5.5 V Vcc = 2.5 to 5.5 V ST24C01 ST24W01 ST25C01 ST25W01 ST24C02 ST24W02


    Original     		PDF AN995 ST24xxx ST25xxx M24xxx ST24W01 ST25C01 ST25W01 ST24C02 ST24W02 ST25C02 ST24C16 AN995 ST24C01 ST24C02 ST24C04 ST24C08 ST24W01 ST24W02 ST24W04 ST24W08

    PJ 1179

    Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
    Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a


    Original     		PDF

    AN995

    Abstract: ST24C02 ST24C04 ST24C08 ST24C16 ST24E32 ST24E64 ST24W01 ST24W02 ST24164
    Text: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the following ranges of EEPROM device: Table 1. ST24xxx and ST25xxx Devices Vcc = 4.5 to 5.5 V Vcc = 2.5 to 5.5 V ST24C01 ST24W01


    Original     		PDF AN995 ST24xxx ST25xxx M24xxx ST24C01 ST24W01 ST25C01 ST25W01 AN995 ST24C02 ST24C04 ST24C08 ST24C16 ST24E32 ST24E64 ST24W01 ST24W02 ST24164

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original     		PDF M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09

    ST24164

    Abstract: AN404 ST24 ST25 ST25164
    Text: r z T S G S -T H O M S O N ST24164 * 7 #» E » l g » IlL iO T ( ò K ! lD ( g i ST25164 SERIAL ACCESS 16K (2K x 8) EEPROM • 1 MILLION ERASE/W RiTE CYCLES with OVER 10 YEA RS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version


    OCR Scan     		PDF ST24164 ST25164 ST25164version ST24/25164 ST24164, 7T2T237 AN404 ST24 ST25 ST25164

    MDAB

    Abstract: 24164s
    Text: /= T ^7# S T 24164 ST25164 S G S -T H O M S O N [* ^ Q [i[L i(§ ¥ ^ @ [* S SERIAL ACCESS CMOS 16K (2048 x 8) EEPROMs • MINIMUM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION « SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24164 version


    OCR Scan     		PDF ST25164 ST24164 ST25164 ST24/25164 ST24164D MDAB 24164s

    Untitled

    Abstract: No abstract text available
    Text: ST24164 ST25164 SGS-THOMSON HDM [iL[i g»Kl S 16Kb (x8) SERIAL EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V tor ST24164 version - 2.5V to 5.5V tor ST25164 version ■ HARDWARE WRITE CONTROL PIN


    OCR Scan     		PDF ST24164 ST25164 ST25164 M24164 150mil ST24/25164

    Untitled

    Abstract: No abstract text available
    Text: / T T S G S -T H O M S O N ^ 7 # . M O lM ilL IIM S IM K g i ST24164 S T25164 SERIAL 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version


    OCR Scan     		PDF ST24164 T25164 ST24164 ST25164 150mil ST24/25164

    Untitled

    Abstract: No abstract text available
    Text: rZ J * 7 # . ST24164 ST25164 S G S -T H O M S O N H D W lllL iM S ia ig i SERIAL ACCESS 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRiTE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version


    OCR Scan     		PDF ST24164 ST25164 ST24164 ST25164 ST24/25164

    ST24164

    Abstract: FZJ 165 AN404 ST24 ST25 ST25164
    Text: rz y ^ / # ST24164 ST25164 S G S -T H O M S O N K iilD g lS ilL E © T K ( B R !lD ( g S SERIAL 16K (2K x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version


    OCR Scan     		PDF ST24164 ST25164 ST25164 150mil ST24/25164 CMOS00 ST24164, FZJ 165 AN404 ST24 ST25

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ^ 7 # ST24164 ST25164 K!ilD S lllLI©DTW!lll©i 16Kb x8 SERIAL EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version


    OCR Scan     		PDF ST24164 ST25164 ST24164 ST25164 M24164 ST24/25164 ST24164,

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


    OCR Scan     		PDF M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA