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    SGS Thomson ST93CS46M1

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    ST93CS46M1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ST93CS46M1 STMicroelectronics 1Kbit (64x16) MULTIPLEXED BUS REGISTERED EEPROM Original PDF
    ST93CS46M1013TR STMicroelectronics 1K 64 x 16 SERIAL MICROWIRE EEPROM Original PDF

    ST93CS46M1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M93C46BN1

    Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA


    Original     		PDF M2716-1F1 M2716-1F6 M2716F1 M2716F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-3F1 M2764A-1F1 M2764A-20F1 M93C46BN1 PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    ST93C46-6

    Abstract: st93cs46b1
    Text: r z 7 S G s - m o M s o N M S fô tm iO ïïlF â tô iM Ê S S T 9 3 C S 4 6 1 K BITS 64 x 16 SERIAL ACCESS CMOS EEPROM MEMORY ADVANCE DATA • USER DEFINED AREA OF WRITE PROTEC­ TED MEMORY. ■ WORD AND PAGE WRITE MODES. ■ HIGH RELIABILITY CMOS EEPROM TE­


    OCR Scan     		PDF toS46 ST93CS46B1 ST93CS46M1 T93CS46B ST93C46-6

    ST93C46-6

    Abstract: ST93CS46M6 ST93C461
    Text: SGS-THOMSON ST93CS46 1 K BITS 64 x 16 SERIAL ACCESS CMOS EEPROM MEMORY ADVANCE DATA USER DEFINED AREA OF WRITE PROTEC­ TED MEMORY. WORD AND PAGE WRITE MODES. HIGH RELIABILITY CMOS EEPROM TE­ CHNOLOGY. TYPICALLY OVER 1,000,000 ERASE/WRITE CYCLES. OVER 10 YEARS DATA RETENTION.


    OCR Scan     		PDF ST93CS46 EnaT93CS46M6 ST93CS46B3 ST93CS46M3 S08PAC ST93C46-6 ST93CS46M6 ST93C461

    MK48T87B24

    Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
    Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W


    OCR Scan     		PDF M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR