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    ST93C46-6

    Abstract: st93cs46b1
    Text: r z 7 S G s - m o M s o N M S fô tm iO ïïlF â tô iM Ê S S T 9 3 C S 4 6 1 K BITS 64 x 16 SERIAL ACCESS CMOS EEPROM MEMORY ADVANCE DATA • USER DEFINED AREA OF WRITE PROTEC­ TED MEMORY. ■ WORD AND PAGE WRITE MODES. ■ HIGH RELIABILITY CMOS EEPROM TE­


    OCR Scan     		PDF toS46 ST93CS46B1 ST93CS46M1 T93CS46B ST93C46-6

    ST93C46-6

    Abstract: ST93CS46M6 ST93C461
    Text: SGS-THOMSON ST93CS46 1 K BITS 64 x 16 SERIAL ACCESS CMOS EEPROM MEMORY ADVANCE DATA USER DEFINED AREA OF WRITE PROTEC­ TED MEMORY. WORD AND PAGE WRITE MODES. HIGH RELIABILITY CMOS EEPROM TE­ CHNOLOGY. TYPICALLY OVER 1,000,000 ERASE/WRITE CYCLES. OVER 10 YEARS DATA RETENTION.


    OCR Scan     		PDF ST93CS46 EnaT93CS46M6 ST93CS46B3 ST93CS46M3 S08PAC ST93C46-6 ST93CS46M6 ST93C461