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    STMicroelectronics STB100NH02LT4

    MOSFET N-CH 24V 60A D2PAK
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    STB100NH02L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB100NH02L STMicroelectronics N-CHANNEL 24V - 0.0052 ? - 60A D2PAK STRIPFET I Original PDF
    STB100NH02LT4 STMicroelectronics N-CHANNEL 24V - 0.0052 ? - 60A D2PAK STRIPFET III POWER MOSFET Original PDF
    STB100NH02LT4 STMicroelectronics N-channel 24V - 0.0052 O - 60A D2PAK STripFET III Power MOSFET Original PDF
    STB100NH02LT4 STMicroelectronics N-Channel 24 V - 0.0052 ohm - 60 A D2PAK STripFET III Power MOSFET Original PDF

    STB100NH02L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B100NH02L

    Abstract: STB100NH02L STB100NH02LT4 b100nh B100NH02L STMicroelectronics
    Text: STB100NH02L N-CHANNEL 24V - 0.0052 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB100NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A (2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB100NH02L O-263) O-263 STB100NH02L B100NH02L STB100NH02LT4 b100nh B100NH02L STMicroelectronics

    B100NH02L

    Abstract: B100NH B100NH02L STMicroelectronics st 393 JESD97 STB100NH02L STB100NH02LT4
    Text: STB100NH02L N-channel 24V - 0.0052Ω - 60A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NH02L 24V <0.006Ω 60A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced ■


    Original     		PDF STB100NH02L STB100NH02L B100NH02L B100NH B100NH02L STMicroelectronics st 393 JESD97 STB100NH02LT4

    b100nh

    Abstract: B100NH02L JESD97 STB100NH02L STB100NH02LT4
    Text: STB100NH02L N-channel 24V - 0.0052Ω - 60A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NH02L 24V <0.006Ω 60A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced ■


    Original     		PDF STB100NH02L STB100NH02L STB100NH02LT4 B100NH02L b100nh JESD97 STB100NH02LT4

    STB100NH02L

    Abstract: No abstract text available
    Text: STB100NH02L N-CHANNEL 24V - 0.0052 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB100NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A (2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB100NH02L O-263) O-263 STB100NH02L

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    Untitled

    Abstract: No abstract text available
    Text: STB160NF3LL N-channel 30V - 0.0028Ω - 160A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID STB160NF3LL 30V <0.0033Ω 160A(1) ) s ( ct 1. Value limited by wire bonding • 100% avalanche tested ■ Ultra low on-resistance ■ Logic level device


    Original     		PDF STB160NF3LL STB100NH02L

    STF12PF06

    Abstract: STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STW10NK80Z STS8C5H30L stw9nk70z
    Text: Power MOSFETs progress in power switching Selection guide May 2005 www.st.com/pmos MDmesh product range VDSS [V] RDS on (max) @ 10V [Ω] STE70NM50 500 0.05 190 190 70 ISOTOP 532 9.9 37 15 STY60NM50 500 0.05 190 190 60 Max247 532 9.9 37 15 STW45NM50FD 500


    Original     		PDF STE70NM50 STY60NM50 Max247 STW45NM50FD O-247 STE48NM50 STW45NM50 STW26NM50 STF12PF06 STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STW10NK80Z STS8C5H30L stw9nk70z

    B160NF3LL

    Abstract: JESD97 STB100NH02L STB160NF3LL
    Text: STB160NF3LL N-channel 30V - 0.0028Ω - 160A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID STB160NF3LL 30V <0.0033Ω 160A(1) 1. Value limited by wire bonding • 100% avalanche tested ■ Ultra low on-resistance ■ Logic level device


    Original     		PDF STB160NF3LL STB100NH02L B160NF3LL B160NF3LL JESD97 STB160NF3LL