STN*4440
Abstract: STN4440
Text: STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4440
STN4440
0V/10
STN*4440
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MOSFET 30v sop-8
Abstract: STN4412 diode 68A transistor 8P Package Marking 8A STN44
Text: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4412
STN4412
MOSFET 30v sop-8
diode 68A
transistor 8P
Package Marking 8A
STN44
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MOSFET 30v sop-8
Abstract: STN4488
Text: STN4488L Dual N Channel Enhancement Mode MOSFET 20A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.
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STN4488L
STN4488L
0V/20A,
0V/18A,
MOSFET 30v sop-8
STN4488
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STN442
Abstract: STN44 Stanson Technology MOSFET 20V 80A
Text: 26 STN44 STN442 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4426
STN442
STN4426
STN442
STN44
Stanson Technology
MOSFET 20V 80A
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STN442D
Abstract: STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley
Text: STN4 42 D STN442 42D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE
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STN442D
STN442
STN442D
O-252
O-251
0V/20
O-252
O-251
STN442
370A
Stanson Technology
STN44
VIEW
48v mosfet switch
bentley
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Untitled
Abstract: No abstract text available
Text: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4438
STN4438
Code120
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Untitled
Abstract: No abstract text available
Text: STN442D N Channel Enhancement Mode MOSFET 27.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE
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STN442D
STN442D
O-252
O-251
0V/20
O-252
O-251
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STN4488
Abstract: No abstract text available
Text: STN4488L N Channel Enhancement Mode MOSFET 20.0A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.
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STN4488L
STN4488L
0V/20A,
0V/18A,
STN4488
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Untitled
Abstract: No abstract text available
Text: STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4416
STN4416
0V/10A,
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stn440
Abstract: STN4402 Stanson Technology
Text: 02 STN44 STN440 N Channel Enhancement Mode MOSFET 12A DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4402
STN440
STN4402
0V/12A,
0V/10A,
stn440
Stanson Technology
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STN44
Abstract: marking code 82A
Text: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4438
STN4438
STN44
marking code 82A
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Untitled
Abstract: No abstract text available
Text: STN4480 N Channel Enhancement Mode MOSFET 14.0A DESCRIPTION STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4480
STN4480
0V/14
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Untitled
Abstract: No abstract text available
Text: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4412
STN4412
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