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    STP20N06FI Search Results

    STP20N06FI Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP20N06FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP20N06FI STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STP20N06FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP20N06FI Unknown Shortform Datasheet & Cross References Data Short Form PDF

    STP20N06FI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STP20N06

    Abstract: STP20N06FI
    Text: STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI VDSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP20N06 STP20N06FI 100oC 175oC O-220 ISOWATT220 STP20N06 STP20N06FI PDF

    stp20n06

    Abstract: No abstract text available
    Text: STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP20N06 STP20N06FI 100oC 175oC O-220 ISOWATT220 stp20n06 PDF

    STP20N06

    Abstract: STP20N06FI
    Text: STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP20N06 STP20N06FI 100oC 175oC O-220 ISOWATT220 STP20N06 STP20N06FI PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    20N06

    Abstract: No abstract text available
    Text: SGS-THOMSON STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP20N 06 STP20N 06FI V dss R DS on Id 60 V 60 V 0 .0 9 £2 0 .0 9 £2 20 A 13 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STP20N06 STP20N06FI STP20N O-220 ISOWATT220 STP20N06/FI GC20180 20N06 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


    OCR Scan     		STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V PDF