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    STMicroelectronics STW54NM65ND

    MOSFET N-CH 650V 49A TO247-3
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    STW54NM65N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STW54NM65N STMicroelectronics N-channel 600 V, 0.054 O - 50 A - TO-247 second generation MDmesh Power MOSFET Original PDF
    STW54NM65ND STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 59A TO-247 Original PDF

    STW54NM65N Datasheets Context Search

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    STW54NM65N

    Abstract: No abstract text available
    Text: STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3


    Original     		PDF STW54NM65N O-247 STW54NM65N

    54NM65ND

    Abstract: No abstract text available
    Text: STW54NM65ND N-channel 650 V, 0.055 Ω typ., 49 A FDmesh II Power MOSFET with fast diode in a TO-247 package Datasheet — production data Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the


    Original     		PDF STW54NM65ND O-247 O-247 54NM65ND

    STW54NM65N

    Abstract: No abstract text available
    Text: STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 TO-247


    Original     		PDF STW54NM65N O-247 STW54NM65N

    Untitled

    Abstract: No abstract text available
    Text: STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID 710 V < 0.065 Ω 50 A ) s ( t c u d o ) r s ( P t Application c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o )


    Original     		PDF STW54NM65N O-247 STW54NM65N

    54NM65ND

    Abstract: No abstract text available
    Text: STW54NM65ND N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh II Power MOSFET with fast diode Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the fast recovery diode devices


    Original     		PDF STW54NM65ND O-247 O-247 54NM65ND

    JESD97

    Abstract: STW54NM65N
    Text: STW54NM65N N-channel 600 V, 0.054 Ω - 50 A - TO-247 second generation MDmesh Power MOSFET Preliminary Data Features Type VDSS @Tjmax RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A • 100% avalanche tested ■ Low input capacitance and gate charge


    Original     		PDF STW54NM65N O-247 JESD97 STW54NM65N

    STx30NM50N

    Abstract: D2PAK D2Pak Package st 247 STW14NM65N STW19NM65N STW24NM65N STW54NM65N STW55NM50N STW55NM60N
    Text: MDmesh II and FDmesh™ II Innovative high-current devices for high-efficiency power converters STMicroelectronics has recently introduced an extensive broad-ranging portfolio using our new high-current super-junction power MOSFETs, which address new higher-efficiency requirements. The innovative 600 V


    Original     		PDF Max247 FLMDMESH0708 STx30NM50N D2PAK D2Pak Package st 247 STW14NM65N STW19NM65N STW24NM65N STW54NM65N STW55NM50N STW55NM60N

    STY112N65M5

    Abstract: STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST
    Text: Power MOSFETs Selection guide February 2009 www.st.com/pmos Ordering information Technology digits may be placed also at the end of the part number. 300 500 600 650 0.09 0.05 0.054 0.085 0.115 0.14 0.19 0.26 0.32 0.38 0.56 0.78 0.035 0.06 0.088 0.13 0.165


    Original     		PDF STP30NM30N STE70NM50 STW55NM50N STW43NM50N STx30NM50N STx25NM50Ny STx21NM50Ny STx16NM50Ny STx13NM50Ny STx12NM50N STY112N65M5 STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST