SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
18-Jul-08
SUB45N03-13L
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Untitled
Abstract: No abstract text available
Text: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 20 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L Top View N-Channel MOSFET
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SUP/SUB45N03-13L
O-220AB
O-263
SUP45N03-13L
SUB45N03-13L
O-220AB
O-263)
O-263
S-00655--Rev.
27-Mar-00
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SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUB45N03-13L
O-263
100lectual
18-Jul-08
SUB45N03-13L
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Untitled
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUB45N03-13L
O-263
SUB45N03-13L
08-Apr-05
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8205
Abstract: 8205 A 8205 datasheet AN609 SUB45N03-13L
Text: SUB45N03-13L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUB45N03-13L
AN609
22-Aug-07
8205
8205 A
8205 datasheet
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SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUB45N03-13L
O-263
S-05011--Rev.
29-Oct-01
SUB45N03-13L
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The subcircuit model was extracted and optimized
Abstract: SUB45N03
Text: SPICE Device Model SUB45N03 N-Channel 30-V D-S , 175°C MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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SUB45N03
subcircuit08
The subcircuit model was extracted and optimized
SUB45N03
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SUB45N03-13L
Abstract: 45ANS
Text: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUB45N03-13L
14-Sep-98
SUB45N03-13L
45ANS
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Untitled
Abstract: No abstract text available
Text: SUB45N03-13L Siliconix N-Channel 30-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY V(BR)DSS (V) 30 RDS(ON) (W) ID (A) 0.013 @ VGS = 10 V 45A 0.02 @ VGS = 4.5 V 45A D TO-263 G G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUB45N03-13L
O-263
SUB45N03-13L
S-58971--Rev.
03-Aug-98
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SUB45N03-13L
Abstract: 13L diode
Text: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUB45N03-13L
S-61149Rev.
26-Jun-06
SUB45N03-13L
13L diode
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SUB45N03-13L
Abstract: No abstract text available
Text: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUB45N03-13L
18-Jul-08
SUB45N03-13L
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SUB45N03-13L
Abstract: S-05010-Rev
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
08-Apr-05
SUB45N03-13L
S-05010-Rev
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SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
S-05010--Rev.
05-Nov-01
SUB45N03-13L
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SUB45N03-13L
Abstract: SUP45N03-13L W45A
Text: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L Top View N-Channel MOSFET
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SUP/SUB45N03-13L
O-220AB
O-263
SUB45N03-13L
SUP45N03-13L
O-220AB
O-263)
O-263
S-03068--Rev.
12-Feb-01
SUB45N03-13L
SUP45N03-13L
W45A
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LX1684CD-TR
Abstract: LM78L05 LX1682 LX1684 LX1684CD vishay power pak SO-8 package dimension MBR2545
Text: LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Fixed 175kHz Switching Frequency Constant Frequency VoltageMode Control Requires No External Compensation Hiccup-Mode Over-Current Protection High Efficiency
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LX1684
175kHz
14-pin
LX1684CD-TR
LM78L05
LX1682
LX1684
LX1684CD
vishay power pak SO-8 package dimension
MBR2545
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Design LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Current is sensed using the voltage drop across the RDS ON of the MOSFET this sensing is delayed for 1µs to eliminate MOSFET ringing errors.
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LX1684
LX1684
175kHz
LX1682
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DIN 45326 MALE
Abstract: MBR052LT1 AD820 ADP3159 ADP3159JRU ADP3179 ADP3179JRU RU-20 SUB45N03-13L sub75n03-07
Text: a FEATURES Optimally Compensated Active Voltage Positioning with Gain and Offset Adjustment ADOPT for Superior Load Transient Response Complies with VRM 8.4 Specifications with Lowest System Cost 4-Bit Digitally Programmable 1.3 V to 2.05 V Output N-Channel Synchronous Buck Driver
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ADP3159/ADP3179
C02190
DIN 45326 MALE
MBR052LT1
AD820
ADP3159
ADP3159JRU
ADP3179
ADP3179JRU
RU-20
SUB45N03-13L
sub75n03-07
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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MBR052LT1
Abstract: AD820 ADP3158 ADP3158JR ADP3178 ADP3178JR PHILIPS toroidal core 3f3
Text: a FEATURES Optimally Compensated Active Voltage Positioning with Gain and Offset Adjustment ADOPT for Superior Load Transient Response Complies with VRM Specifications with Lowest System Cost 4-Bit Digitally Programmable 1.3 V to 2.05 V Output N-Channel Synchronous Buck Driver
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C02189
MBR052LT1
AD820
ADP3158
ADP3158JR
ADP3178
ADP3178JR
PHILIPS toroidal core 3f3
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Untitled
Abstract: No abstract text available
Text: SUP/SUB45N03-13L VISHAY Siliconix T N-Channel 30-V D-S , 175°C MOSFET New Product r DS(ON) V (BR)DSS (V) 30 \\0 * « * £ ° ’ PRODUCT SUMMARY •d (A) (-2) 0.013 @ V GS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D Q TO-220AB o .Jl TO-263 < 1 G D S DRAIN connected to TAB
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SUP/SUB45N03-13L
O-220AB
O-263
SUP45N03-13L
SUB45N03-13L
S-58547--
26-Oct-98
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Untitled
Abstract: No abstract text available
Text: SUB45N03-13L Siliconix N-Channel 30-V D-S , 175°C MOSFET New Product IQ * « * £ ° ’ PRODUCT SUM M ARY r DS(ON) V (BR)DSS (V) (-2) HP1 \\o * y*6 •d (A) 0.013 @ V GS = 10 V 45a 0.02 @ VGS = 4.5 V 45a 30 D Q TO-263 r i n G D S Top View o s SUB45N03-13L
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SUB45N03-13L
O-263
SUB45N03-13L
S-58971--
03-Aug-98
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