AT-232
Abstract: No abstract text available
Text: M/Â-COM/ MIC RO ELECT RO NICS Sb451fl3 0GG0737 'ìSb » M A C O bRE D Digital Attenuator, 30 dB, 4 Bit DC-2 GHz Features AT-232 CR-6 • Attenuation 2 dB Steps to 30 dB • Temperature Stability +/- 0.18 dB from -55°C to +85°C Typical • Ultra Low DC Power Consumption
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Sb451fl3
0QG0737
AT-232
AT-232
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Untitled
Abstract: No abstract text available
Text: ñ / A - C O M ADVANCE» Sñ DE |sb4Slfl3 Q0D00D5 5 D MA4F200 Seríes Gallium Arsenide Power Field Effect Transistor GaAs FET m i Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate structure GaAs power FET for am plifier applica
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Q0D00D5
MA4F200
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mmic case styles
Abstract: No abstract text available
Text: fl/A-COM ADV S E M I C O N D U C T O R M Ai 27E D S b 4 a i ô 3 000 0 33 M T T * 7 V . / 3 - O l MA4GM301T-500 2000 MA4GM301T SERIES 2010 2012 2100 GaAs MMIC DC - 2 GHz Voltage Variable Absorptive Attenuator Features • SINGLE OR DUAL DC BIAS CONTROL ■ EASILY CASCADABLE
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MA4GM301T-500
MA4GM301T
mmic case styles
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J2JL
Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR 27E D 51=42103 0Ü002Ö2 h T - 5 ! ‘ I I MA4GM204MC-500* GaAs MMIC D C -2 GHz SP4T Matched Switch i f lift,!,il «• 1^ 11 « . _L k +3] ft t- Features ■ BROAD BANDWIDTH DC - 2 GHz ■ LOW DISTORTION OPTION T il'rtT ■ 3 NANOSECOND SWITCHING
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MA4GM204MC-500*
MA4GM204MC-500
J2JL
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Untitled
Abstract: No abstract text available
Text: /qm M/A - CO M ADV S E M I C O N D U C T O R E7E D 5L.4E1Ö3 00 G0 54 4 T r•siii MA4GM202L-2000 202L-2010 202L-2012 MA4GM202L SERIES 202L-2100 GaAs MMIC DC-2 GHz SPDT Switch Features ■ LOW LOSS ■ 3 NANOSECOND SWITCHING ■ EASILY CASCADABLE ■ HIGH RELIABILITY
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MA4GM202L-2000
MA4GM202L
202L-2010
202L-2012
202L-2100
MA4GM202L-2000
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