mmic case styles
Abstract: No abstract text available
Text: fl/A-COM ADV S E M I C O N D U C T O R M Ai 27E D S b 4 a i ô 3 000 0 33 M T T * 7 V . / 3 - O l MA4GM301T-500 2000 MA4GM301T SERIES 2010 2012 2100 GaAs MMIC DC - 2 GHz Voltage Variable Absorptive Attenuator Features • SINGLE OR DUAL DC BIAS CONTROL ■ EASILY CASCADABLE
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MA4GM301T-500
MA4GM301T
mmic case styles
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Untitled
Abstract: No abstract text available
Text: ¡PHj yg* y O l l i i lia * Ml M1 11| fi « Im & i t e rt, ^ S H « j» fê l f f i 4 $T ^ ¿M MA4GM201 '20000 MA4GM201-T5. . MA4GM201-500. . MA4GM211-500. . MA4GM202-2000. MA4GM202-T5. . MA4GM202-500. . MA4GM202L-2000 MA4GM202L-T5. MA4GM202L-500. MA4GM202-D14S
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MA4GM201
MA4GM201-T5.
MA4GM201-500.
MA4GM211-500.
MA4GM202-2000.
MA4GM202-T5.
MA4GM202-500.
MA4GM202L-2000
MA4GM202L-T5.
MA4GM202L-500.
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MA4G
Abstract: GaAs FET chip dca300 MA4GM212-500 M202-2000 MA4GM202-T5
Text: AJÎKOvi GaAs FET MM 1C Broadband Control Products Capability Guide Features • DC TO 18 GHz OPERATION ■ EXTREMELY LOW DC POWER CONSUMPTION ■ NANOSECOND SWITCHING ■ EXCELLENT INTERMODULATION ■ LOW INSERTION LOSS ■ EXCELLENT TEMPERATURE STABILITY
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MA4GM316
Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR Apt< S7 E D Sk42163 0D0034b h r ^ /3 - o j MA4GM316A-500 MA4GM316A SERIES GaAs M M IC D C -2 GHz 6 0 dB Variable Attenuator 2000 2010 2012 2100 Features • SINGLE* OR DUAL DC BIAS CONTROL ■ EASILY CASCADABLE ■ 60 dB ATTENUATION RANGE
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Sk42163
0D0034b
MA4GM316A-500
MA4GM316A
MA4GM316
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