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    Vishay Siliconix SI1002R-T1-GE3

    MOSFET N-CH 30V 610MA SC75A
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    SI1002R Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1002R-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 610MA SC75A Original PDF

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    Abstract: No abstract text available
    Text: Si1002R_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in PSpice,


    Original     		Si1002R AN609, 3703u 3834u 7193m 7700m 26-Sep-14 PDF

    Si1002R

    Abstract: No abstract text available
    Text: SPICE Device Model Si1002R www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si1002R 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si1002R

    Abstract: No abstract text available
    Text: Si1002R www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) 0.560 at VGS = 4.5 V 0.5 0.620 at VGS = 2.5 V 0.2 0.700 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (TYP.) 0.72 nC • •


    Original     		Si1002R SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF