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    Vishay Siliconix SI1305EDL-T1-E3

    MOSFET P-CH 8V 860MA SC70-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1305EDL-T1-E3 Reel 3,000
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    SI1305EDL Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1305EDL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3 Original PDF
    SI1305EDL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3 Original PDF

    SI1305EDL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-Channel 1.8-V G-S MOSFET sot-323

    Abstract: No abstract text available
    Text: Si1305EDL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V ± 0.92 0.380 at VGS = - 2.5 V ± 0.79 0.530 at VGS = - 1.8 V ± 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1305EDL 2002/95/EC OT-323 SC-70 Si1305EDL-T1-E3 Si1305EDL-T1-GE3 18-Jul-08 P-Channel 1.8-V G-S MOSFET sot-323

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1305EDL 18-Jul-08

    DATASHEET 5609

    Abstract: transistor 5609 8309 DATASHEET 5609 transistor 5609 transistor AN609
    Text: Si1305EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1305EDL AN609 08-May-07 DATASHEET 5609 transistor 5609 8309 DATASHEET 5609 transistor 5609 transistor

    Si1305DL

    Abstract: ams330
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


    Original     		PDF Si1305EDL OT-323 SC-70 18-Jul-08 Si1305DL ams330

    99399

    Abstract: SI1305DL
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


    Original     		PDF Si1305EDL OT-323 SC-70 09-Nov-99 99399 SI1305DL

    Si1305DL

    Abstract: Tr431
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


    Original     		PDF Si1305EDL OT-323 SC-70 08-Apr-05 Si1305DL Tr431

    Untitled

    Abstract: No abstract text available
    Text: Si1305EDL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V ± 0.92 0.380 at VGS = - 2.5 V ± 0.79 0.530 at VGS = - 1.8 V ± 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1305EDL 2002/95/EC OT-323 SC-70 Si1305EDL-T1-E3 Si1305EDL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8