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    SI2306BDS Price and Stock

    Vishay Siliconix SI2306BDS-T1-GE3

    MOSFET N-CH 30V 3.16A SOT23-3
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    DigiKey SI2306BDS-T1-GE3 Cut Tape 12,304 1
    • 1 $0.86
    • 10 $0.535
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    • 1000 $0.23934
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    SI2306BDS-T1-GE3 Digi-Reel 12,304 1
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    • 1000 $0.23934
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    SI2306BDS-T1-GE3 Reel 12,000 3,000
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    Vishay Siliconix SI2306BDS-T1-E3

    MOSFET N-CH 30V 3.16A SOT23-3
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    DigiKey SI2306BDS-T1-E3 Cut Tape 9,912 1
    • 1 $0.88
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    • 1000 $0.24674
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    SI2306BDS-T1-E3 Digi-Reel 9,912 1
    • 1 $0.88
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    • 1000 $0.24674
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    SI2306BDS-T1-E3 Reel 9,000 3,000
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    RS SI2306BDS-T1-E3 Bulk 3,000
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    Quest Components SI2306BDS-T1-E3 128
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    New Advantage Corporation SI2306BDS-T1-E3 18,000 1
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    Vishay Siliconix SI2306BDS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI2306BDS-T1-BE3 Cut Tape 1
    • 1 $0.66
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    • 1000 $0.17815
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    SI2306BDS-T1-BE3 Digi-Reel 1
    • 1 $0.66
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    SI2306BDS-T1-BE3 Reel 3,000
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    Vishay Intertechnologies SI2306BDS-T1-E3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2306BDS-T1-E3)
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    Avnet Americas SI2306BDS-T1-E3 Reel 3,000 21 Weeks 3,000
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    SI2306BDS-T1-E3 Ammo Pack 17 Weeks, 3 Days 1
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    Mouser Electronics SI2306BDS-T1-E3 28,985
    • 1 $0.53
    • 10 $0.403
    • 100 $0.302
    • 1000 $0.225
    • 10000 $0.185
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    Verical SI2306BDS-T1-E3 5,600 334
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    SI2306BDS-T1-E3 3,000 3,000
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    SI2306BDS-T1-E3 1,260 43
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    Arrow Electronics SI2306BDS-T1-E3 3,000 21 Weeks 3,000
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    SI2306BDS-T1-E3 Cut Strips 1,260 21 Weeks 1
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    Newark SI2306BDS-T1-E3 Cut Tape 5,700 1
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    SI2306BDS-T1-E3 Reel 1
    • 1 $0.238
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    Bristol Electronics SI2306BDS-T1-E3 32,254
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    SI2306BDS-T1-E3 2,762
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    Quest Components SI2306BDS-T1-E3 2,209
    • 1 $0.9
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    TTI SI2306BDS-T1-E3 Reel 36,000 3,000
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    TME SI2306BDS-T1-E3 2,080 1
    • 1 $0.84
    • 10 $0.512
    • 100 $0.34
    • 1000 $0.303
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    Avnet Asia SI2306BDS-T1-E3 23 Weeks 3,000
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    Chip1Stop SI2306BDS-T1-E3 Cut Tape 7
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    EBV Elektronik SI2306BDS-T1-E3 22 Weeks 3,000
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    Vishay Intertechnologies SI2306BDS-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2306BDS-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI2306BDS-T1-GE3 Reel 21 Weeks 3,000
    • 1 -
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    • 10000 $0.1599
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    Mouser Electronics SI2306BDS-T1-GE3 3,855
    • 1 $0.55
    • 10 $0.404
    • 100 $0.285
    • 1000 $0.269
    • 10000 $0.167
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    Verical SI2306BDS-T1-GE3 2,820 36
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    SI2306BDS-T1-GE3 1,645 109
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    Arrow Electronics SI2306BDS-T1-GE3 Cut Strips 2,820 21 Weeks 1
    • 1 $0.3922
    • 10 $0.3315
    • 100 $0.2576
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    Newark SI2306BDS-T1-GE3 Cut Tape 3,000
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    Bristol Electronics SI2306BDS-T1-GE3 9,000
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    TTI SI2306BDS-T1-GE3 Reel 3,000
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    • 10000 $0.169
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    Avnet Asia SI2306BDS-T1-GE3 23 Weeks 3,000
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    Chip1Stop SI2306BDS-T1-GE3 Cut Tape 1,645
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    Component Electronics, Inc SI2306BDS-T1-GE3 1,320
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    EBV Elektronik SI2306BDS-T1-GE3 22 Weeks 3,000
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    Find more SI2306BDS price and stock on Findchips.com

    SI2306BDS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2306BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.16A SOT23-3 Original PDF
    SI2306BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.16A SOT23-3 Original PDF

    SI2306BDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11

    SI2306BDS-T1-E3

    Abstract: Si2306BDS SI2306DS SI2306DS-T1-E3 120r Si2306DS-T1
    Text: Specification Comparison Vishay Siliconix Si2306BDS vs. Si2306DS Description: N-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2306BDS-T1-E3 Replaces Si2306DS-T1-E3 Si2306BDS-T1-E3 Replaces Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si2306BDS Si2306DS OT-23 Si2306BDS-T1-E3 Si2306DS-T1-E3 Si2306DS-T1 06-Nov-06 120r

    SI2306BDS-T1-E3

    Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 18-Jul-08 SI2306

    Untitled

    Abstract: No abstract text available
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si2306BDS

    Abstract: 50395 SI2306 Si2306DS 73318
    Text: SPICE Device Model Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2306BDS to-10-V S-50395Rev. 14-Mar-05 50395 SI2306 Si2306DS 73318

    SI2306BD

    Abstract: No abstract text available
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SI2306BD

    SI2306BDS-T1-E3

    Abstract: 50135 Si2306BDS
    Text: Si2306BDS New Product Vishay Siliconix N-Channel 30 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.047 @ VGS = 10 V 4.0 0.065 @ VGS = 4.5 V 3.5 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 30 3.0 TO-236 (SOT-23) G 1 S 2 3 D


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1--E3 08-Apr-05 SI2306BDS-T1-E3 50135

    SI2306BDS

    Abstract: L6 MARKING SI2306BDS-T1-E3
    Text: Si2306BDS New Product Vishay Siliconix N-Channel 30 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.047 @ VGS = 10 V 4.0 0.065 @ VGS = 4.5 V 3.5 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 30 3.0 TO-236 (SOT-23) G 1 S 2 3 D


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1--E3 S-50135--Rev. 24-Jan-05 L6 MARKING SI2306BDS-T1-E3

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 08-Apr-05

    4606 mosfet

    Abstract: AN609 Si2306BDS
    Text: Si2306BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2306BDS AN609 03-May-07 4606 mosfet

    Si2306BDS

    Abstract: Si2306DS
    Text: SPICE Device Model Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2306BDS to-10-V 18-Jul-08 Si2306DS

    Untitled

    Abstract: No abstract text available
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11

    sirf Atlas IV

    Abstract: sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB
    Text: LTC3577-3/LTC3577-4 Highly Integrated Portable Product PMIC DESCRIPTION FEATURES n n n n n n n n n n n n Full Featured Li-Ion/Polymer Charger/PowerPath Controller with Instant-On Operation Triple Adjustable High Efficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT


    Original     		PDF LTC3577-3/LTC3577-4 800mA, 500mA, 500mA LTC3577-3) LTC3577-4) DFN14 LTC4098 600mA QFN20 sirf Atlas IV sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB

    LTC3577-1

    Abstract: LTC3577
    Text: LTC3577/LTC3577-1 Highly Integrated 6-Channel Portable PMIC DESCRIPTION FEATURES n n n n n n n n n n n n n Full Featured Li-Ion/Polymer Charger/PowerPath Controller with Instant-On Operation Triple Adjustable High Efficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT


    Original     		PDF LTC3577/LTC3577-1 800mA, 500mA, 500mA DFN14 LTC4098 600mA QFN20 3577fa LTC3577-1 LTC3577

    Sirf Atlas IV

    Abstract: No abstract text available
    Text: LTC3677-3 Highly Integrated Portable Product PMIC DESCRIPTION FEATURES Full Featured Li-Ion/Polymer Charger/PowerPath Controller with Instant-On Operation n Triple Adjustable High Eficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT n I2C Adjustable SW Slew Rates for EMI Reduction


    Original     		PDF LTC3677-3 800mA, 500mA, 500mA 150mA QFN28 LTC3557/ LTC3557-1 LTC3557-1 Sirf Atlas IV

    LTC3577-1

    Abstract: LTC3577
    Text: LTC3577/LTC3577-1 Highly Integrated 6-Channel Portable PMIC DESCRIPTION FEATURES n n n n n n n n n n n n n Full Featured Li-Ion/Polymer Charger/PowerPath Control with Instant-On Operation Triple Adjustable High Efficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT


    Original     		PDF LTC3577/LTC3577-1 800mA, 500mA, 500mA DFN14 LTC4098 600mA QFN20 3577f LTC3577-1 LTC3577

    SQT-108-01-F-D-RA

    Abstract: LTC3480EDD LPS4018-332MLC DC1303 LT3480 Si2306BDS
    Text: DEMO CIRCUIT DC1303A QUICK START GUIDE LTC4098EPDC: USB Compatible Switching Power Manager/Li-Ion Charger with Overvoltage Protection DESCRIPTION Demonstration Circuit 1303A is a high efficiency USB Power/Li-Ion battery manager plus a HV regulator battery tracking controller. The LTC4098EPDC is available in a 20-pin 3mm x 4mm × 0.55mm UTQFN surface mount package.


    Original     		PDF DC1303A LTC4098EPDC: LTC4098EPDC 20-pin 100uF Si2333DS SQT-108-01-F-D-RA DC1303A SQT-108-01-F-D-RA LTC3480EDD LPS4018-332MLC DC1303 LT3480 Si2306BDS

    sirf atlas v

    Abstract: sirf Atlas IV SiRF Atlas sirf iv zener 3.7v 1000mA sirf atlas 4 transistor 107A equivalent ltc3577 express card DVB sirf atlas iv datasheet
    Text: LTC3577-3 Highly Integrated Portable Product PMIC DESCRIPTION FEATURES n n n n n n n n n n n n Full Featured Li-Ion/Polymer Charger/PowerPath Control with Instant-On Operation Triple Adjustable High Efficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT


    Original     		PDF LTC3577-3 800mA, 500mA, 500mA DFN14 LTC4098 600mA QFN20 35773f sirf atlas v sirf Atlas IV SiRF Atlas sirf iv zener 3.7v 1000mA sirf atlas 4 transistor 107A equivalent ltc3577 express card DVB sirf atlas iv datasheet

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


    Original     		PDF SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2