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    SI2315DS Search Results

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    SI2315DS Price and Stock

    Vishay Siliconix SI2315DS-T1

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    Bristol Electronics SI2315DS-T1 3,967
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    Quest Components SI2315DS-T1 3,173
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    SI2315DS-T1 1,576
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    SI2315DS-T1 227
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    Vishay Intertechnologies SI2315DST1

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    Bristol Electronics SI2315DST1 1,339
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    Vishay Intertechnologies SI2315DS-T1

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    Bristol Electronics SI2315DS-T1 1,240
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    Quest Components SI2315DS-T1 800
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    Chip 1 Exchange SI2315DS-T1 2,578
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    Vishay Huntington SI2315DS-T1

    Trans MOSFET P-CH 12V 3.5A 3-Pin SOT-23 T/R / P-Channel 1.25-W, 1.8-V (G-S) MOSFET
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    Win Source Electronics SI2315DS-T1 1,815
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    SI2315DS Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2315DS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI2315DS Vishay MOSFET P CHAN, 1.8VGS-12VDS Original PDF
    SI2315DS Vishay P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF
    Si2315DS Vishay Intertechnology P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF
    Si2315DS Vishay Telefunken P-Channel 1.25-W 1.8-V (G-S) MOSFET Original PDF
    Si2315DS SPICE Device Model Vishay P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF
    Si2315DS-T1 Vishay P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF
    SI2315DS-T1 Vishay Intertechnology P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF

    SI2315DS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c5 marking code

    Abstract: Si2315DS Si2315DS-T1
    Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View


    Original     		Si2315DS O-236 OT-23) Si2315DS-T1 08-Apr-05 c5 marking code PDF

    Si2315DS

    Abstract: Si2315DS-T1
    Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View


    Original     		Si2315DS O-236 OT-23) Si2315DS-T1 S-31990--Rev. 13-Oct-03 PDF

    Si2315BDS-T1-E3

    Abstract: Si2315BDS-T1 Si2315BDS Si2315DS Si2315DS-T1
    Text: Specification Comparison Vishay Siliconix Si2315BDS vs. Si2315DS Description: P-Channel, 1.8 V G-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2315BDS-T1 Replaces Si2315DS-T1 Si2315BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2315DS-T1


    Original     		Si2315BDS Si2315DS OT-23 Si2315BDS-T1 Si2315DS-T1 Si2315BDS-T1-E3 06-Nov-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code


    Original     		Si2315DS O-236 OT-23) S-56947--Rev. 28-Dec-98 PDF

    Si2315DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2315DS P-Channel 1.25-W, 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		Si2315DS PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2315DS O-236 OT-23) S-56947--Rev. 28-Dec-98 PDF

    Si2315DS

    Abstract: No abstract text available
    Text: Si2315DS Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2315DS (C5)* *Marking Code


    Original     		Si2315DS O-236 OT-23) S-56947--Rev. 28-Dec-98 PDF

    Si2315DS

    Abstract: Si2315DS-T1
    Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View


    Original     		Si2315DS O-236 OT-23) Si2315DS-T1 18-Jul-08 PDF

    Si2315DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2315DS 17-Apr-01 PDF

    LTN150XG-L05

    Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756
    Text: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A


    Original     		BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A LTN150XG-L05 ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756 PDF

    DIODE 22B4

    Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
    Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams


    Original     		BA92-01774A BA41-# 400MHZ 512MBYTE 66MHZ MAP31 68ohm 3000mA 012ohm DIODE 22B4 BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4 PDF

    LEXAN 121r - 21051

    Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
    Text: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F


    Original     		BA31-00024A BA39-00474A BA39-00493A S/80GB WLAN-802 L50000 L35mm L228mm LEXAN 121r - 21051 lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A PDF

    AR5212

    Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
    Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)


    Original     		ISL6225VCC AR5212 ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516 PDF

    14D360

    Abstract: CIS10J270NC CQ509 BSS138_NL LM358DB SAMSUNG HT Q9 BSS138-NL samsung electronics ba41 M/CIS10J270NC C51MV MCP51
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D MONACO C B g n l u a s i t


    Original     		28-C2 28-C4 28-D1 33-C3 0033nF 015nF 033nF 047nF 14D360 CIS10J270NC CQ509 BSS138_NL LM358DB SAMSUNG HT Q9 BSS138-NL samsung electronics ba41 M/CIS10J270NC C51MV MCP51 PDF

    LTN150XG-L05

    Abstract: Al w29 LTN150XG LTN150XG-L05-V RC410M RC410MB HY60 BA41-00569a BA61-01045A BA39-00527A
    Text: - This Document can not be used without Samsung's authorization - 6 6-1 78 MECHANICAL EXPLODED VIEW AND PARTLIST System Overall Exploded View SAMSUNG R45 - This Document can not be used without Samsung's authorization - 6 MECHANICAL EXPLODED VIEW AND PARTLIST


    Original     		NP-R45K003/CHN BA97-02521A BA75-01768A BA92-04149A BA62-00393A BA62-00395A BA31-00025A BA31-00026A BA62-00394A BA62-00397A LTN150XG-L05 Al w29 LTN150XG LTN150XG-L05-V RC410M RC410MB HY60 BA41-00569a BA61-01045A BA39-00527A PDF

    54B2

    Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		RC410MD SB450 BA41-00615A RC410MD Sheet18. Sheet19. Sheet20 TP682 TP685 TP686 54B2 HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504 PDF

    K0301

    Abstract: b154ew02 BA81-01824A BA92-04308A BA68 BA59-01557A TM61 BA96-02838A BA44-00211A DAC-09N014
    Text: This Document can not be used without Samsung’s authorization. 6. MECHANICAL EXPLODED VIEW AND PARTLIST 6-1 System Overall Exploded View K0007 I0003 K1001 K4001 K0001 K0002 K0102 K1002 K4002 K0101 K1003 K0201 L1007 K0101 T4001 T4002 I0006 I0001 W0101 B0004


    Original     		K0007 I0003 K4001 K0002 K0102 K1001 K0001 K1002 K4002 K0101 K0301 b154ew02 BA81-01824A BA92-04308A BA68 BA59-01557A TM61 BA96-02838A BA44-00211A DAC-09N014 PDF

    wireless energy meter circuit diagram

    Abstract: SZGD6060-PET solar cells circuit diagram 12 volt solar cell solar pv schematic photovoltaic cell 10V buck boost solar LTC4054LES5 photovoltaic cell LPR2400ERA
    Text: A Solar Energy Harvester for Wireless Sensor Networks Application Note M1001 Solar provides an excellent source of energy for wireless systems that have no access to fixed power. Solar energy is abundant, present in all but the most northern-reaching climes and dependable for the foreseeable


    Original     		M1001 SI2315DS MMBT3904 LTC4054LES54 TPS61220 NCP303LSN33T1 NCP303LSN27T1 MP325 SZGD6060PET ANM1001 wireless energy meter circuit diagram SZGD6060-PET solar cells circuit diagram 12 volt solar cell solar pv schematic photovoltaic cell 10V buck boost solar LTC4054LES5 photovoltaic cell LPR2400ERA PDF

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


    Original     		SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K PDF

    n15 3KV SEC

    Abstract: SIL1362 RA1156 schematic lcd inverter dell c840 dell D520 dell samsung y main hd50 d4.0 schematic D520 dell inverter C596A dell 1010
    Text: 4 3 This Sheet of Engineering drawings and specifications contains Confidential, Trade Secret and other Proprietary information of Dell Computer Corporation "Dell" . This document may not be transferred or copied without the express written authorization of Dell.


    Original     		PDF

    BA41-00695A

    Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		BA41-00694A BA41-00695A YONAH667 047nF RHU002N06 12-C4 TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103 PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    BA81-01580A

    Abstract: BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st 6-1-1.Expl ode_Vi ew-Sorrento-Assy SAMSUNG X1 < 6 - 1 > Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st


    Original     		NP-X1-C000/SER BA97-02388A BA67-00280A BA75-012SUB 44to5 AD-6019 API1AD02) 90TO2 SWB-4000D BA81-01580A BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A PDF

    vishay siliconix code marking

    Abstract: C5 MARKING
    Text: SÌ2315DS VISHAY Siliconix T P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY r DS(on) (-2) I d (A) 0.055 @ VGS = —4.5 V ±3 .5 0.075 @ VGS = -2 .5 V ±3 0.118 @ VGS = —1.8 V ±2 V ds (V) -1 2 TO-236 (SOT-23) :-£ÿ Top View Si2315DS (C5)*


    OCR Scan     		2315DS O-236 OT-23) Si2315DS S-56947-- 28-Dec-98 vishay siliconix code marking C5 MARKING PDF