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    SI2333DDS Price and Stock

    Vishay Siliconix SI2333DDS-T1-GE3

    MOSFET P-CH 12V 6A SOT23-3
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    DigiKey SI2333DDS-T1-GE3 Cut Tape 21,086 1
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    SI2333DDS-T1-GE3 Digi-Reel 21,086 1
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    SI2333DDS-T1-GE3 Reel 21,000 3,000
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    RS SI2333DDS-T1-GE3 Bulk 3,000
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    Bristol Electronics SI2333DDS-T1-GE3 6 2
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    Quest Components SI2333DDS-T1-GE3 4
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    New Advantage Corporation SI2333DDS-T1-GE3 144,000 1
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    Vishay Siliconix SI2333DDS-T1-BE3

    P-CHANNEL 12-V (D-S) MOSFET
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    DigiKey SI2333DDS-T1-BE3 Reel 4,710 3,000
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    SI2333DDS-T1-BE3 Digi-Reel 4,710 1
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    SI2333DDS-T1-BE3 Cut Tape 4,710 1
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    New Advantage Corporation SI2333DDS-T1-BE3 27,000 1
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    Vishay Intertechnologies SI2333DDS-T1-BE3

    Transistor MOSFET P-CH 12V 6A 3-Pin SOT-23 - Tape and Reel (Alt: SI2333DDS-T1-BE3)
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    Avnet Americas SI2333DDS-T1-BE3 Reel 27,000 18 Weeks 3,000
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    Mouser Electronics SI2333DDS-T1-BE3 62,993
    • 1 $0.49
    • 10 $0.328
    • 100 $0.223
    • 1000 $0.158
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    Newark SI2333DDS-T1-BE3 Bulk 3,000
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    TTI SI2333DDS-T1-BE3 Reel 24,000 3,000
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    Vishay Intertechnologies SI2333DDS-T1-GE3

    Power MOSFET, P Channel, 12 V, 6 A, 28 Milliohms, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: SI2333DDS-T1-GE3)
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    Avnet Americas SI2333DDS-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI2333DDS-T1-GE3 103,907
    • 1 $0.48
    • 10 $0.404
    • 100 $0.264
    • 1000 $0.18
    • 10000 $0.121
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    Newark SI2333DDS-T1-GE3 Cut Tape 18,104 5
    • 1 $0.423
    • 10 $0.403
    • 100 $0.287
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    SI2333DDS-T1-GE3 Reel 3,000
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    SI2333DDS-T1-GE3 Reel 3,000
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    Bristol Electronics SI2333DDS-T1-GE3 21,890
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    Quest Components SI2333DDS-T1-GE3 2,384
    • 1 $1.625
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    • 100 $1.625
    • 1000 $0.65
    • 10000 $0.5688
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    SI2333DDS-T1-GE3 13
    • 1 $0.2544
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    TTI SI2333DDS-T1-GE3 Reel 6,000 3,000
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    TME SI2333DDS-T1-GE3 3,298 1
    • 1 $0.364
    • 10 $0.312
    • 100 $0.239
    • 1000 $0.181
    • 10000 $0.175
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    Chip 1 Exchange SI2333DDS-T1-GE3 54,600
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    Avnet Asia SI2333DDS-T1-GE3 15,000 20 Weeks 3,000
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    EBV Elektronik SI2333DDS-T1-GE3 19 Weeks 3,000
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    Vishay Semiconductors SI2333DDS-T1-GE3

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB
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    Quest Components SI2333DDS-T1-GE3 350
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    • 100 $0.1696
    • 1000 $0.1357
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    Find more SI2333DDS price and stock on Findchips.com

    SI2333DDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2333DDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A SOT23 Original PDF

    SI2333DDS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V


    Original     		Si2333DDS O-236 OT-23) Si2333DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si2333DDS vs. Si2333CDS Description: P-Channel, 12 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2333DDS-T1-GE3 replaces Si2333CDS-T1-GE3Si2333DDS-T1-GE3 replaces Si2333CDS-T1-E3


    Original     		Si2333DDS Si2333CDS OT-23 Si2333DDS-T1-GE3 Si2333CDS-T1-GE3 Si2333CDS-T1-E3 08-Nov-12 PDF

    si2333dds

    Abstract: si2333dd SI2333DDS-T1-GE3
    Text: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V


    Original     		Si2333DDS O-236 OT-23) Si2333DDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si2333dd PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2333DDS www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si2333DDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF

    ACT2801

    Abstract: No abstract text available
    Text: ACT2801 Demo Board Application Report Rev 2.0, 05-Aug-2014 Dedicated Power Bank Solution FEATURES  5V/1.5A input current limit  1.0A battery charge current  5V/1.2A boost output current  1.4A boost output constant current limit  5.0V+/- 100mV output voltage


    Original     		ACT2801 05-Aug-2014 100mV 10mA-2100mA ACT2801: PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 PDF

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    ACT2801CQL-T

    Abstract: No abstract text available
    Text: ACT2801/ACT2801C Rev 4, 07-Aug-14 5V/1.5A Backup Battery Pack Manager FEATURES APPLICATIONS • Dedicated Single Chip Solution for Mobile Power • • • • • With Minimal Component Count 5V/1.5A Constant Output Current Limit in Boost Mode 1.5A Switching Charger Limit


    Original     		ACT2801/ACT2801C 07-Aug-14 10mA-2400mA ACT2801/ACT2801C ACT2801CQL-T PDF

    Untitled

    Abstract: No abstract text available
    Text: ACT2801 Rev 0, 21-Jan-14 5V/1.5A Backup Battery Pack Manager FEATURES • Dedicated Single Chip Solution for Mobile  APPLICATIONS Power With Minimal Component Count 5V/1.5A Constant Output Current in Boost Mode 1.5A Switching Charger Programmable 4.1V to 4.35V Battery Voltage


    Original     		ACT2801 21-Jan-14 10mA-2400mA PDF