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    SI3424BDV Price and Stock

    Vishay Siliconix SI3424BDV-T1-GE3

    MOSFET N-CH 30V 8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3424BDV-T1-GE3 Digi-Reel 8,290 1
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    SI3424BDV-T1-GE3 Cut Tape 8,290 1
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    SI3424BDV-T1-GE3 Reel 3,000 3,000
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    New Advantage Corporation SI3424BDV-T1-GE3 6,000 1
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    Vishay Siliconix SI3424BDV-T1-E3

    MOSFET N-CH 30V 8A 6TSOP
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    DigiKey SI3424BDV-T1-E3 Reel 3,000
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    Vishay Intertechnologies SI3424BDV-T1-GE3

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    Bristol Electronics SI3424BDV-T1-GE3 620
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    Quest Components SI3424BDV-T1-GE3 496
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    SI3424BDV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3424BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6TSOP Original PDF
    SI3424BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6TSOP Original PDF

    SI3424BDV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Marking 7133-1

    Abstract: Si3424BDV-T1-E3 7133-1
    Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT


    Original     		Si3424BDV Si3424BDV-T1-E3 08-Apr-05 Marking 7133-1 7133-1 PDF

    Si3424BDV-T1-E3

    Abstract: No abstract text available
    Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT


    Original     		Si3424BDV Si3424BDV-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Specification Comparison Vishay Siliconix Si3424CDV vs. Si3424BDV Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-E3 Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si3424CDV Si3424BDV Si3424CDV-T1-GE3 Si3424BDV-T1-E3 Si3424BDV-T1-GE3 30-May-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si3424BDV 2002/95/EC Si3424BDV-T1-E3 Si3424BDV-T1-GE3 18-Jul-08 PDF

    Si3424DV

    Abstract: Si3424BDV Si3424BDV-T1-E3 Si3424DV-T1 Si3424DV-T1-E3
    Text: Specification Comparison Vishay Siliconix Si3424BDV vs. Si3424DV Description: Package: Pin Out: N-Channel 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3424BDV-T1-E3 Replaces Si3424DV-T1-E3 Si3424BDV-T1-E3 Replaces Si3424DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si3424BDV Si3424DV Si3424BDV-T1-E3 Si3424DV-T1-E3 Si3424DV-T1 06-Sep-07 PDF

    Si3424BDV-T1-E3

    Abstract: Si3424BDV-T1-GE3
    Text: Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si3424BDV 2002/95/EC Si3424BDV-T1-E3 Si3424BDV-T1-GE3 18-Jul-08 PDF

    Si3424BDV-T1-E3

    Abstract: Si3424BDV-T1-GE3
    Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si3424BDV 2002/95/EC Si3424BDV-T1-E3 Si3424BDV-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		Si3424BDV Si3424BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3424BDV S-71494Rev. 23-Jul-07 PDF

    Si3424BDV-T1-E3

    Abstract: No abstract text available
    Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT


    Original     		Si3424BDV Si3424BDV-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si3424BDV 2002/95/EC Si3424BDV-T1-E3 Si3424BDV-T1-GE3 11-Mar-11 PDF

    spice datasheet 7806

    Abstract: AN609 68301
    Text: Si3424BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3424BDV AN609 19-Dec-07 spice datasheet 7806 68301 PDF

    S101

    Abstract: SI3424B tsop-6 marking ag 74623
    Text: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si3424BDV 2002/95/EC Si3424BDV-T1-E3 Si3424BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S101 SI3424B tsop-6 marking ag 74623 PDF

    S-71494

    Abstract: No abstract text available
    Text: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3424BDV 18-Jul-08 S-71494 PDF

    ALC889DSD

    Abstract: WPCE775L SL28648BLC transistor c4544 NS682403P wpce775 c2097 transistor transistor C4770 UPEK transistor C4046
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Rev. Title of Schematics Page Index page BLOCK DIAGRAM CLOCK GEN (SL28648BLC)


    Original     		SL28648BLC) R5250 PR181 ALC889DSD WPCE775L SL28648BLC transistor c4544 NS682403P wpce775 c2097 transistor transistor C4770 UPEK transistor C4046 PDF

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Data ADP1829 Reference Design FCDC 00062 FEATURES Five Output Voltages: 1.0V, 1.8V, 3.3V x 2, 5V Output Current: 0.7A to 2.8A Input voltage: 9-12V Ripple 2% ppk of Output Voltage Transient step ±5%, 50% max load ADP1829 REFERENCE DESIGN DESCRIPTION


    Original     		ADP1829 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 PDF