A2732
Abstract: S8175
Text: SPICE Device Model Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3471CDV
18-Jul-08
A2732
S8175
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1094 m
Abstract: AN609
Text: Si3471CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3471CDV
AN609
25-Mar-08
1094 m
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Untitled
Abstract: No abstract text available
Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3471CDV
2002/95/EC
Si3471CDV-T1-E3
Si3471CDV-T1-GE3
11-Mar-11
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Si3471CDV-T1-E3
Abstract: No abstract text available
Text: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)
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Si3471CDV
Si3471CDV-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3471CDV
2002/95/EC
Si3471CDV-T1-E3
Si3471CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si3471CDV-T1-E3
Abstract: No abstract text available
Text: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)
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Si3471CDV
Si3471CDV-T1-E3
18-Jul-08
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Si3471CDV-T1-E3
Abstract: Si3471DV Si3471DV-T1 Si3471DV-T1-E3 mosfet 23 Tsop-6
Text: Specification Comparison Vishay Siliconix Si3471CDV vs. Si3471DV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3471CDV-T1-E3 replaces Si3471DV-T1-E3 Si3471CDV-T1-E3 replaces Si3471DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si3471CDV
Si3471DV
Si3471CDV-T1-E3
Si3471DV-T1-E3
Si3471DV-T1
05-May-08
mosfet 23 Tsop-6
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Si3471CDV-T1-E3
Abstract: SI3471CDV 285mm
Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si3471CDV
2002/95/EC
Si3471CDV-T1-E3
Si3471CDV-T1-GE3
18-Jul-08
285mm
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BSS138 NXP
Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
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OT223
OT883
PHT8N06LT
BSP030
PMN50XP
PMN55LN
PMN34LN
BSH103
BSS138 NXP
FDC642P
2n7002 nxp
AO3401
BSS123 NXP
BSH103
IRLL014N
PMV65XP
BSH108
BSP250
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