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    Vishay Siliconix SI4158DY-T1-GE3

    MOSFET N-CH 20V 36.5A 8SO
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    SI4158DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4158DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 36.5A 8-SOIC Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4158DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0025 at VGS = 10 V 36.5 0.003 at VGS = 4.5 V 33.3 VDS (V) 20 • • • • Qg (Typ.) 40 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4158DY Si4158DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0025 at VGS = 10 V 36.5 0.003 at VGS = 4.5 V 33.3 VDS (V) 20 • • • • Qg (Typ.) 40 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4158DY Si4158DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0025 at VGS = 10 V 36.5 0.003 at VGS = 4.5 V 33.3 VDS (V) 20 • • • • Qg (Typ.) 40 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4158DY Si4158DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    C 5763 transistor

    Abstract: c 5763 5763 AN609
    Text: Si4158DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4158DY AN609, 02-Dec-08 C 5763 transistor c 5763 5763 AN609

    258B DIODE

    Abstract: si4158
    Text: New Product Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0025 at VGS = 10 V 36.5 0.003 at VGS = 4.5 V 33.3 VDS (V) 20 • • • • Qg (Typ.) 40 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4158DY Si4158DY-T1-GE3 18-Jul-08 258B DIODE si4158