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Vishay Siliconix SI4406DY-T1-E3 MOSFET N-CH 30V 13A 8SO
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DigiKey	SI4406DY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI4406DY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $2.83	Get Quote
Vishay Siliconix SI4406DY-T1-GE3 MOSFET N-CH 30V 13A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4406DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4406DY-T1-E3
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Bristol Electronics	SI4406DY-T1-E3		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4406DY-T1-E3		4,000			1 $4.344 10 $4.344 100 $4.344 1000 $2.172 10000 $2.172	Buy Now
Vishay Intertechnologies SI4406DYT1E3 N-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4406DYT1E3		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4406DY Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si4406DY		Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET		Original	PDF
SI4406DY		Vishay Siliconix	MOSFETs		Original	PDF
Si4406DY SPICE Device Model		Vishay	N-Channel 30-V (D-S) MOSFET		Original	PDF
Si4406DY-T1		Vishay	N-Channel 30-V (D-S) MOSFET		Original	PDF
SI4406DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC		Original	PDF
SI4406DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC		Original	PDF

SI4406DY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SI4406DY Abstract: No abstract text available Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % RG Tested	Original	Si4406DY Si4406DY-T1 Si4406DY-T1-E3 18-Jul-08	PDF
Si4406DY Abstract: No abstract text available Text: Si4406DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 17	Original	Si4406DY S-20065--Rev. 04-Mar-02	PDF
SI4406DY Abstract: No abstract text available Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4406DY Abstract: No abstract text available Text: SPICE Device Model Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4406DY S-51095Rev. 13-Jun-05	PDF
SI4406DY Abstract: No abstract text available Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
AN609 Abstract: Si4406DY Text: Si4406DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4406DY AN609 29-Aug-05	PDF
Si4406DY Abstract: 70702 Text: SPICE Device Model Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4406DY 18-Jul-08 70702	PDF
SI4406DY Abstract: No abstract text available Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V	Original	Si4406DY Si4406DY-T1 08-Apr-05	PDF
SI4406DY Abstract: No abstract text available Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 11-Mar-11	PDF
Si4406DY Abstract: Si4406DY-T1-E3 Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 18-Jul-08	PDF
SI4406DY Abstract: No abstract text available Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % RG Tested	Original	Si4406DY Si4406DY-T1 Si4406DY-T1-E3 08-Apr-05	PDF
Si4406DY Abstract: Si4406DY-T1 Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V	Original	Si4406DY Si4406DY-T1 S-03951--Rev. 26-May-03	PDF
Si4406DY Abstract: No abstract text available Text: \\\ SPICE Device Model Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4406DY 0-to-10V 29-Apr-02	PDF
Si4406DY Abstract: No abstract text available Text: Si4406DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V	Original	Si4406DY 70ance, S-03662--Rev. 14-Apr-03	PDF

IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF
sud50n025-06p Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110 Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m	Original	VSA-SG0019-0310 sud50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110	PDF