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    SI4453DY Search Results

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    SI4453DY Price and Stock

    Vishay Siliconix SI4453DY-T1-E3

    MOSFET P-CH 12V 10A 8SO
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    DigiKey SI4453DY-T1-E3 Reel 2,500
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    Vishay Siliconix SI4453DY-T1-GE3

    MOSFET P-CH 12V 10A 8SO
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    DigiKey SI4453DY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4453DY-T1-E3

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    Bristol Electronics SI4453DY-T1-E3 2,500
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    SI4453DY-T1-E3 29
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    Vishay Intertechnologies SI4453DYT1

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    Bristol Electronics SI4453DYT1 1,393
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    Vishay Intertechnologies SI4453DY-T1

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    Bristol Electronics SI4453DY-T1 1,310
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    SI4453DY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4453DY Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF
    Si4453DY SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    SI4453DY-T1 Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF
    SI4453DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC Original PDF
    SI4453DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC Original PDF

    SI4453DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4453DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4453DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4453DY 16-Sep-03

    mosfe

    Abstract: Si4453DY Si4453DY-T1 Si4453DY-T1-E3
    Text: Si4453DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 14 0.00775 at VGS = - 2.5 V - 13 0.01025 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original     		PDF Si4453DY Si4453DY-T1 Si4453DY-T1-E3 S-61005-Rev. 12-Jun-06 mosfe

    Untitled

    Abstract: No abstract text available
    Text: Si4453DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 14 0.00775 at VGS = - 2.5 V - 13 0.01025 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original     		PDF Si4453DY Si4453DY-T1 Si4453DY-T1-E3 18-Jul-08

    Si4453DY

    Abstract: Si4453DY-T1
    Text: Si4453DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 14 0.00775 @ VGS = - 2.5 V - 13 0.01025 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch


    Original     		PDF Si4453DY Si4453DY-T1 S-03849--Rev. 28-Apr-03

    Si4453DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4453DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4453DY 18-Jul-08

    Si4453DY

    Abstract: Si4453DY-T1-E3
    Text: Si4453DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 14 - 12 0.00775 at VGS = - 2.5 V - 13 0.01025 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4453DY 2002/95/EC Si4453DY-T1-E3 Si4453DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4453DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 14 0.00775 @ VGS = - 2.5 V - 13 0.01025 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch


    Original     		PDF Si4453DY Si4453DY-T1 08-Apr-05

    on 5295 transistor

    Abstract: mar 822 on 5295 AN609 Si4453DY
    Text: Si4453DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4453DY AN609 19-Mar-07 on 5295 transistor mar 822 on 5295

    Untitled

    Abstract: No abstract text available
    Text: Si4453DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 14 - 12 0.00775 at VGS = - 2.5 V - 13 0.01025 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4453DY 2002/95/EC Si4453DY-T1-E3 Si4453DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4453DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 14 - 12 0.00775 at VGS = - 2.5 V - 13 0.01025 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4453DY 2002/95/EC Si4453DY-T1-E3 Si4453DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4453DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 14 0.00775 at VGS = - 2.5 V - 13 0.01025 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original     		PDF Si4453DY Si4453DY-T1 Si4453DY-T1-E3 08-Apr-05

    72522

    Abstract: Si4453DY
    Text: SPICE Device Model Si4453DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4453DY S-51095Rev. 13-Jun-05 72522

    qmb-111p

    Abstract: NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER CH-4542 DLP31DN201ML4L 52u27
    Text: 5 4 Version Date Author Remarks 0.1 05.06.2007 WAM Initial version 0.2 28.11.2007 PHA 3 2 1 Correction of PCI-Bus Correction of minor errors D 0.3 05.03.2008 PHA D Fix VCC SB +5V Standby to VCC (+5V) LCD (X15) Pinout compatible with MSM800 12V Supply removed / Supply the 12V external on .


    Original     		PDF MSM800 CH-4542 MSEBX800 330uF VCC12 SI4453DY 2N7002 qmb-111p NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER DLP31DN201ML4L 52u27

    0603WAJ0103T5E

    Abstract: CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT
    Text: Datum: 15/07/2008 SL V 8 .10 SLSLLI33.RPT SL-S-D-12 Digital_Logic AG DETAIL-STUECKLISTE Nr. :811060-VO.3 MSEBX8 00. V0.3 von SCM Erstellt am Pos.:Lay: Art.Nr. 1 490520 Bezeichnung : Seite: CH-4542 Luterbach Nr.811060-V0.3. Lay.=0 Lay.=1 Lay.=2 Lay.=3 Lay.=4


    OCR Scan     		PDF SLSLLI33 SL-S-D-12 CH-4542 811060-VO 811060-V0 MSEBX800 LX800/520 LX800 0603WAJ0103T5E CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT