SI4542DY Search Results

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4542DY 30V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Si4542DY

Contextual Info: Si4542DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V "6.9 0.035 @ VGS = 4.5 V "5.8 0.032 @ VGS = –10 V "6.1 0.045 @ VGS = –4.5 V "5.1 D1 S2 SO-8 S1 G1 S2 G2 8

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21

SI4542DY-T1-E3

Abstract: Si4542DY-T1-GE3 Si4542DY
Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21

N- and P-Channel 30-V D-S MOSFET

Abstract: Si4542DY P-CHANNEL 30V DS MOSFET
Contextual Info: SPICE Device Model Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1

Si4542DY

Abstract: Si4542DY-T1
Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1

4542 so8

Abstract: CQ228
Contextual Info: Si4542DY 30V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Contextual Info: Si4542DY VISHAY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M AR Y VDS (V) N-Channel P-Channel r DS(ON) (&) I d (A) 0.025 @ V GS = 10 V ±6 .9 0.035 @ VGS = 4.5 V ±5 .8 0.032 @ VGS = —10 V ±6.1 0.045 @ V GS = -4 .5 V ±5.1 30 9° '

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1

3771

Abstract: 8948 AN609 Si4542DY
Contextual Info: Si4542DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

83V2

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel −30 30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 0.032 @ VGS = −10 V −6.1 0.045 @ VGS = −4.5 V −5.1

Si4542DY

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V "6.9 0.035 @ VGS = 4.5 V "5.8 0.032 @ VGS = –10 V "6.1 0.045 @ VGS = –4.5 V "5.1 D1 S2 SO-8 S1 1 8 D1

Si4542DY

Abstract: SI4542
Contextual Info: Si4542DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V "6.9 0.035 @ VGS = 4.5 V "5.8 0.032 @ VGS = –10 V "6.1 0.045 @ VGS = –4.5 V "5.1 D1 S2 SO-8 S1 G1 S2 G2 8

Si4542DY

Abstract: Si4542DY-T1-E3 Si4542DY-T1-GE3
Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21

4542 so8

Abstract: Si4542DY Fairchild 4542 4542 mosfet PD46
Contextual Info: Si4542DY 30V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Si4542DY

Contextual Info: SPICE Device Model Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

4542 mosfet

Abstract: Fairchild 4542
Contextual Info: Si4542DY 30V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

1N4007 MINI MELF

Contextual Info: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .