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    in 4436

    Abstract: AN609
    Text: Si4736BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4736BDY AN609 27-Apr-07 in 4436 PDF

    v3211

    Abstract: No abstract text available
    Text: SPICE Device Model Si4736BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4736BDY 18-Jul-08 v3211 PDF