SI4804BDY Search Results

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

Si4804CDY

Abstract: Si4804BDY-T1-E3 Si4804BDY Si4804CDY-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si4804CDY vs. Si4804BDY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3 Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3

Si4804BDY

Abstract: Si4804BDY-T1-E3 Si4804BDY-T1-GE3
Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FET Power MOSFET D PWM Optimized APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter

AN609

Abstract: Si4804BDY
Contextual Info: Si4804BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • TrenchFET Power MOSFET • PWM Optimized • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS

Si4804BDY

Contextual Info: \\\ SPICE Device Model Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4804BDY

Abstract: Si4804BDY-E3 Si4804BDY-T1-E3 Si4804DY Si4804DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4804BDY vs. Si4804DY Description: Dual N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4804BDY Replaces Si4804DY Si4804BDY-E3 (Lead (Pb)-free version) Replaces Si4804DY

Si4804BDY

Abstract: Si4804BDY-T1-E3 Si4804BDY-T1-GE3
Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

Si4804BDY

Contextual Info: Si4804BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FET Power MOSFET? D PWM Optimized APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

Si4804BDY

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter

Si4804BDY-T1-E3

Abstract: Si4804BDY Si4804BDY-T1-GE3
Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

Si4804BDY

Contextual Info: SPICE Device Model Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4804DY

Abstract: Si4804BDY equivalent Si4804BDY Si4804DY-T1 Si4804BDY-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4804BDY vs. Si4804DY Description: Dual N-Channel, 30-V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4804BDY Replaces Si4804DY Si4804BDY—E3 (Lead Free version) Replaces Si4804DY Si4804BDY-T1 Replaces Si4804DY-T1

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FET Power MOSFET D PWM Optimized APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter

Contextual Info: MIC2169 Micrel MIC2169 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169 is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in a small MSOP-10 package. The MIC2169 allows compact DC/DC solutions

MIC2169A

Abstract: si4174dy IRF7821 MSOP-10 SD103BWS Si4800
Contextual Info: MIC2169B 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169B is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in small MSOP-10 and MSOP-10 ePad packages. The MIC2169B allows compact DC/DC solutions with a minimal external

MIC2169BMM

Abstract: MIC2169YMM MSOP-10 SD103BWS Si4800 Si4804BDY IRF7821 MIC2169 mic2169 pwm
Contextual Info: MIC2169 Micrel MIC2169 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169 is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in a small MSOP-10 package. The MIC2169 allows compact DC/DC solutions

C2168

Abstract: Si4804BDY equivalent si4800 IRF7821 MIC2168 MIC2168A MIC2168ABMM MIC2168AYMM MSOP-10 Si4804BDY
Contextual Info: MIC2168A 1MHz PWM Synchronous Buck-Control IC General Description The MIC2168A is a high-efficiency, simple to use 1MHz PWM synchronous buck-control IC housed in a small MSOP-10 package. The MIC2168A allows compact DC/DC solutions with a minimal external component

ni usb 6212

Abstract: SS-00259-1 C2060 C2055 C2068 quanta C2096 R2067 915GM SW1010CPT
Contextual Info: 1 2 3 4 5 478 PIN micro FC-PGA 14, 15, 15w , 17w inch XGA, SXGA+ A LVDS LCD P7 P3,4 400/533 MHz A LVDS Alviso DVI M24/M26 UNBUFFERED DDRII SODIMM DDRII 400/533 P10 915GM/PM R/G/B CRT P9 R/G/B UNBUFFERED DDRII SODIMM DDRII 400/533 1257 PIN (micro FCBGA) PCIE 16Lanes

MAX8770

Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
Contextual Info: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)