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Vishay Siliconix SI4923DY-T1-E3 MOSFET 2P-CH 30V 6.2A 8SOIC
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RS	SI4923DY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $2.34	Get Quote
Vishay Siliconix SI4923DY-T1-GE3 MOSFET 2P-CH 30V 6.2A 8SOIC
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DigiKey	SI4923DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI4923DY Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4923DY		Vishay Siliconix	MOSFETs		Original	PDF
Si4923DY SPICE Device Model		Vishay	Dual P-Channel 30-V (D-S) MOSFET		Original	PDF
SI4923DY-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 6.2A 8-SOIC		Original	PDF
SI4923DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 6.2A 8-SOIC		Original	PDF

SI4923DY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
3771 Abstract: 8948 AN609 Si4923DY Text: Si4923DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4923DY AN609 19-Mar-07 3771 8948	PDF
Untitled Abstract: No abstract text available Text: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free	Original	Si4923DY Si4923DY-T1 Si4923DY-T1-E3 18-Jul-08	PDF
Si4923DY Abstract: No abstract text available Text: SPICE Device Model Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4923DY S-52397Rev. 21-Nov-05	PDF
Si4923DY Abstract: No abstract text available Text: Si4923DY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.021 @ VGS = -10 V -8.3 0.031 @ VGS = -4.5 V - 6.8 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS -30 D Load Switches	Original	Si4923DY S-22120--Rev. 25-Nov-02	PDF
Si4923DY Abstract: Si4923DY-T1 Si4923DY-T1-E3 Text: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free	Original	Si4923DY Si4923DY-T1 Si4923DY-T1-E3 S-61006-Rev. 12-Jun-06	PDF
DIODE 83A Abstract: Si4923DY Text: SPICE Device Model Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4923DY 0-to-10V 16-Dec-02 DIODE 83A	PDF
Untitled Abstract: No abstract text available Text: Si4923DY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.021 @ VGS = -10 V -8.3 0.031 @ VGS = -4.5 V - 6.8 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS -30 D Load Switches	Original	Si4923DY 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free	Original	Si4923DY Si4923DY-T1 Si4923DY-T1-E3 08-Apr-05	PDF
SI4923DY-T1-E3 Abstract: MOSFET cross Text: Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4923DY 2002/95/EC Si4923DY-T1-E3 Si4923DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET cross	PDF
Si4923DY Abstract: No abstract text available Text: SPICE Device Model Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4923DY 18-Jul-08	PDF
Si4923DY Abstract: Si4923DY-T1-E3 Text: Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4923DY 2002/95/EC Si4923DY-T1-E3 Si4923DY-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4923DY 2002/95/EC Si4923DY-T1-E3 Si4923DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
CEP50N06 Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223	Original	O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139	PDF