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    Si4930DY

    Abstract: w 6556 AN609
    Text: Si4930DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4930DY AN609 19-Mar-07 w 6556 PDF

    74218

    Abstract: Si4930DY si4930
    Text: SPICE Device Model Si4930DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4930DY 18-Jul-08 74218 si4930 PDF