Si4955DY
Abstract: No abstract text available
Text: SPICE Device Model Si4955DY Vishay Siliconix Dual P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si4955DY
0-V/20-V
18-Jul-08
|
PDF
|
Si4955DY
Abstract: Si4955DY-T1-E3
Text: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0
|
Original
|
Si4955DY
0-V/20-V
Si4955DY-T1-E3
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4955DY Vishay Siliconix New Product Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = −4.5 V
|
Original
|
Si4955DY
0-V/20-V
Si4955DY--E3
Si4955DY-T1--E3
08-Apr-05
|
PDF
|
52887
Abstract: 4132-22 6707 7408 4327 7408 and MOSFET 7121 AN609 Si4955DY
Text: Si4955DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si4955DY
AN609
23-Dec-05
52887
4132-22
6707
7408
4327
7408 and
MOSFET 7121
|
PDF
|
Si4955DY
Abstract: No abstract text available
Text: SPICE Device Model Si4955DY Vishay Siliconix Dual P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si4955DY
0-V/20-V
S-52446Rev.
28-Nov-05
|
PDF
|
Si4955DY
Abstract: No abstract text available
Text: SPICE Device Model Si4955DY Vishay Siliconix P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si4955DY
0-V/20-V
0-to-10V
06-Aug-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4955DY New Product Vishay Siliconix Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = - 4.5 V
|
Original
|
Si4955DY
0-V/20-V
Si4955DY-T1
S-31509--Rev.
14-Jul-03
|
PDF
|
Si4955DY
Abstract: Si4955DY-T1-E3 A1224
Text: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0
|
Original
|
Si4955DY
0-V/20-V
Si4955DY-T1-E3
18-Jul-08
A1224
|
PDF
|
Si4955DY
Abstract: Si4955DY-T1
Text: Si4955DY Vishay Siliconix New Product Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = −4.5 V
|
Original
|
Si4955DY
0-V/20-V
Si4955DY--E3
Si4955DY-T1--E3
S-32411--Rev.
24-Nov-03
Si4955DY-T1
|
PDF
|
