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    SI5442DU Search Results

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    SI5442DU Price and Stock

    Vishay Siliconix SI5442DU-T1-GE3

    MOSFET N-CH 20V 25A PPAK
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    DigiKey SI5442DU-T1-GE3 Digi-Reel 38,898 1
    • 1 $0.77
    • 10 $0.516
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    SI5442DU-T1-GE3 Cut Tape 38,898 1
    • 1 $0.77
    • 10 $0.516
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    SI5442DU-T1-GE3 Reel 36,000 3,000
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    Vishay Intertechnologies SI5442DU-T1-GE3

    Trans MOSFET N-CH 20V 12.4A 8-Pin PowerPAK ChipFET T/R - Tape and Reel (Alt: SI5442DU-T1-GE3)
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    Avnet Americas SI5442DU-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SI5442DU-T1-GE3 10,210
    • 1 $0.8
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    Verical SI5442DU-T1-GE3 3,000 28
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    Arrow Electronics SI5442DU-T1-GE3 Cut Strips 3,000 17 Weeks 1
    • 1 $0.2995
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    • 100 $0.2487
    • 1000 $0.2202
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    TTI SI5442DU-T1-GE3 Reel 3,000
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    Avnet Asia SI5442DU-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SI5442DU-T1-GE3 18 Weeks 3,000
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    Vishay Huntington SI5442DU-T1-GE3

    MOSFET N-CH 20V 25A PPAK / N-Channel 20 V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI5442DU-T1-GE3 29,100
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    • 1000 $0.245
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    SI5442DU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5442DU-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 25A PPAK CHIPFET Original PDF

    SI5442DU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5442DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		PDF Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		PDF Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		PDF Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		PDF Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5442DU www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si5442

    Abstract: C6025A
    Text: Si5442DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		PDF Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 si5442 C6025A

    Untitled

    Abstract: No abstract text available
    Text: Si5442DU_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si5442DU AN609, 4785m 2168u 9352m 5110u 7802m 6700m 1401u 09-Jan-13

    Si542

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint


    Original     		PDF Si5936DU Si5944DU Si5999EDU Si5997DU Si5517DU VMN-PT0102-1402 Si542