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    Vishay Siliconix SI5475BDC-T1-E3

    MOSFET P-CH 12V 6A 1206-8
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    Vishay Siliconix SI5475BDC-T1-E3/BKN

    P-CHANNEL 12-V (D-S) MOSFET | Siliconix / Vishay SI5475BDC-T1-E3/BKN
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    SI5475BDC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5475BDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A 1206-8 Original PDF
    SI5475BDC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A 1206-8 Original PDF

    SI5475BDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


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    PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    diode 1334

    Abstract: transistor 5457 AN609 Si5475BDC 73816
    Text: Si5475BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si5475BDC AN609 01-Mar-06 diode 1334 transistor 5457 73816

    Si5475BDC

    Abstract: Si5475BDC-T1-E3
    Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • TrenchFET Power MOSFET: 1.8-V Rated Qg (Typ) RoHS


    Original
    PDF Si5475BDC Si5475BDC-T1--E3 08-Apr-05 Si5475BDC-T1-E3

    1206 8 ChipFET

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


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    PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 11-Mar-11 1206 8 ChipFET

    Si5475BDC-T1-GE3

    Abstract: Si5475BDC Si5475BDC-T1-E3
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original
    PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 18-Jul-08

    SI5475BDC

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated


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    PDF Si5475BDC Si5475BDC-T1--E3 S-50939--Rev. 09-May-05

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


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    PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5475BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si5475BDC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated


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    PDF Si5475BDC Si5475BDC-T1--E3 08-Apr-05

    Si5475BDC

    Abstract: Si5475BDC-T1-E3
    Text: New Product Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 VDS (V) - 12 • TrenchFET Power MOSFET: 1.8 V Rated Qg (Typ.) RoHS


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    PDF Si5475BDC Si5475BDC-T1-E3 08-Apr-05

    Si5475BDC

    Abstract: Si5475BDC-T1-E3
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


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    PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 11-Mar-11

    Si5475BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si5475BDC S-50905Rev. 16-May-05

    SI5475DDC-T1-GE3

    Abstract: Si5475BDC Si5475BDC-T1-E3
    Text: Specification Comparison Vishay Siliconix Si5475DDC vs. Si5475BDC Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5475DDC-T1-GE3 replaces Si5475BDC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    PDF Si5475DDC Si5475BDC Si5475DDC-T1-GE3 Si5475BDC-T1-E3 06-Aug-08

    74119

    Abstract: Si5475BDC Si5475BDC-T1-E3 Si5475DC Si5475DC-T1
    Text: Specification Comparison Vishay Siliconix Si5475BDC vs. Si5475DC Description: P-Channel, 12 V D-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5475BDC-T1-E3 Replaces Si5475DC-T1-E3 Si5475BDC-T1 Replaces Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    PDF Si5475BDC Si5475DC Si5475BDC-T1-E3 Si5475DC-T1-E3 Si5475BDC-T1 Si5475DC-T1 74119

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


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    PDF SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


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    PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8