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    SI5853CDC Price and Stock

    Vishay Siliconix SI5853CDC-T1-E3

    MOSFET P-CH 20V 4A 1206-8
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    DigiKey SI5853CDC-T1-E3 Reel
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    Bristol Electronics SI5853CDC-T1-E3 42,000 7
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    • 10 $0.825
    • 100 $0.3094
    • 1000 $0.231
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    Quest Components SI5853CDC-T1-E3 33,600
    • 1 $1.1
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    SI5853CDC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5853CDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4A 1206-8 Original PDF

    SI5853CDC Datasheets Context Search

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    Si5853CDC

    Abstract: Si5853DDC-T1-E3 SI5853DDC
    Text: Specification Comparison Vishay Siliconix Si5853DDC vs. Si5853CDC Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode 1206-8 ChipFET Identical Part Number Replacements: Si5853DDC-T1-E3 replaces Si5853CDC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5853DDC Si5853CDC Si5853DDC-T1-E3 Si5853CDC-T1-E3 27-Oct-08

    Si5853CDC

    Abstract: Vishay DaTE CODE 1206-8 72334/MTN
    Text: New Product Si5853CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF Si5853CDC 18-Jul-08 Vishay DaTE CODE 1206-8 72334/MTN

    Si5853CDC

    Abstract: No abstract text available
    Text: Si5853CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5853CDC 2002/95/EC 18-Jul-08

    MARKING CODE JF

    Abstract: No abstract text available
    Text: New Product Si5853CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF Si5853CDC Si5853CDC-T1-E3 08-Apr-05 MARKING CODE JF

    AN609

    Abstract: Si5853CDC power MOSFET spice model
    Text: Si5853CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5853CDC AN609 22-Oct-07 power MOSFET spice model

    Untitled

    Abstract: No abstract text available
    Text: Si5853CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5853CDC 2002/95/EC Si5853CDC-T1-l 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5853CDC

    Abstract: Si5853DC Si5853DC-T1
    Text: Specification Comparison Vishay Siliconix Si5853CDC vs. Si5853DC Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode 1206-8 ChipFET Identical Part Number Replacements: Si5853CDC-T1-E3 replaces Si5853DC-T1-E3 Si5853CDC-T1-E3 replaces Si5853DC-T1


    Original     		PDF Si5853CDC Si5853DC Si5853CDC-T1-E3 Si5853DC-T1-E3 Si5853DC-T1 06-Feb-08