Untitled
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si5858DU-T1-GE3
Abstract: si5858
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
18-Jul-08
Si5858DU-T1-GE3
si5858
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Untitled
Abstract: No abstract text available
Text: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5858DU
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5858DU
12-Sep-05
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74299
Abstract: n mosfet pspice parameters AN609 filter circuit using mosfet 45843
Text: Si5858DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5858DU
AN609
27-Jun-07
74299
n mosfet pspice parameters
filter circuit using mosfet
45843
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Mosfet MARKING A1
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
11-Mar-11
Mosfet MARKING A1
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marking code jb
Abstract: mosfet marking jb 5193-1
Text: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5858DU
Si5858DU-T1
51931--Rev.
12-Sep-05
marking code jb
mosfet marking jb
5193-1
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Untitled
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5858DU
18-Jul-08
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Marking Code JB
Abstract: Si5858DU-T1-GE3 C1B7
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free • LITTLE FOOT Plus Power MOSFET
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Si5858DU
18-Jul-08
Marking Code JB
Si5858DU-T1-GE3
C1B7
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marking code jb
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code jb
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BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8
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SI3865BDV-T1-E3CT-ND
SI4720CY-T1-E3CT-ND
SI6924AEDQ-T1-E3CT-ND
SI1040X-T1-E3TR-ND
SI1865DL-T1-E3TR-ND
SI1869DH-T1-E3TR-ND
SI3861BDV-T1-E3TR-ND
SI3865BDV-T1-E3TR-ND
SI4720CY-T1-E3TR-ND
SI6924AEDQ-T1-E3TR-ND
BS250KL-TR1-E3
si6435adq-t1-e3
TP0610KL
Si9435BDY-T1-e3ct
SI6467BDQ-T1-E3
SI1024X-T1-E3
SI5855DC-T1-E3
SIA411DJ-T1-E3
SUM110P06-07L-E3 D2PAK
SI1903DL-T1-E3
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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SiB431EDK
Abstract: No abstract text available
Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,
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LLP1010-6L
LLP75-6L
VEMI45AC-HNH
VEMI65AC-HCI
LLP2513-13L
VEMI85AC-HGK
LLP1713-9L
LLP3313-17L
SiB431EDK
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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vishay power pak SO-8 package height
Abstract: si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8
Text: Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
vishay power pak SO-8 package height
si4812b
Siliconix mosfet guide
PowerPACK 1212-8
D2Pak Package vishay material
Si5855DC
"Power MOSFETs"
1206-8 chipfet layout
SI4620DY
PowerPAK SO-8
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si5480
Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT
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Si6463BDQ
Si6459BDQ-T1-GE3
SI5944DU-T1-E3
SI5944DU-T1-GE3
SI5945DU-T1-E3
SI5945DU-T1-GE3
SI5947DU-T1-E3
SI5947DU-T1-GE3
PPAKSC75
si5480
SiA913DJ-T1-GE3
SIA513DJ-T1-E3
SI6404DQ-T1
SIA411DJ-T1-E3
SIB414DK-T1-E3
SI6913DQ-T1-E3
SIA513DJ-T1-GE3
SI6925ADQ-T1-E3
SI6981DQ-T1-GE3
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