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    Vishay Siliconix SI5920DC-T1-E3

    MOSFET 2N-CH 8V 4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5920DC-T1-E3 Reel 3,000
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    SI5920DC-T1-E3 Cut Tape 1
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    SI5920DC-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI5920DC-T1-GE3

    MOSFET 2N-CH 8V 4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5920DC-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.4396
    Buy Now
    SI5920DC-T1-GE3 Digi-Reel 1
    • 1 $1.64
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    SI5920DC-T1-GE3 Cut Tape 1
    • 1 $1.64
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    SI5920DC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5920DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 8V 4A 1206-8 Original PDF
    SI5920DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 8V 4A 1206-8 Original PDF

    SI5920DC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


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    Si5920DC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    74134

    Abstract: No abstract text available
    Text: SPICE Device Model Si5920DC Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si5920DC 18-Jul-08 74134 PDF

    74134

    Abstract: AN5732
    Text: SPICE Device Model Si5920DC Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si5920DC S-52400Rev. 21-Nov-05 74134 AN5732 PDF

    SI5920

    Abstract: No abstract text available
    Text: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


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    Si5920DC 2002/95/EC 18-Jul-08 SI5920 PDF

    S5223

    Abstract: No abstract text available
    Text: Si5920DC New Product Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (W) ID (A) 0.032@ VGS = 4.5 V 4a 0.036 @ VGS = 2.5 V 4a 0.045 @ VGS = 1.8 V 4a 0.054 @ VGS = 1.5 V 4a D TrenchFETr Power MOSFET: 1.5–V Rated


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    Si5920DC 52231--Rev. Oct-05 S5223 PDF

    AN609

    Abstract: No abstract text available
    Text: Si5920DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    Si5920DC AN609 27-Jun-07 PDF

    SA MARKING DIODE

    Abstract: No abstract text available
    Text: Si5920DC New Product Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (W) ID (A) 0.032@ VGS = 4.5 V 4a 0.036 @ VGS = 2.5 V 4a 0.045 @ VGS = 1.8 V 4a 0.054 @ VGS = 1.5 V 4a D TrenchFETr Power MOSFET: 1.5–V Rated


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    Si5920DC Aug-05 SA MARKING DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5920DC Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ) 7.3 nC • TrenchFET Power MOSFET: 1.5 V Rated


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    Si5920DC 08-Apr-05 PDF

    si5920

    Abstract: No abstract text available
    Text: New Product Si5920DC Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ) 7.3 nC • TrenchFET Power MOSFET: 1.5 V Rated


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    Si5920DC 18-Jul-08 si5920 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5920DC New Product Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (W) ID (A) 0.032@ VGS = 4.5 V 4a 0.036 @ VGS = 2.5 V 4a 0.045 @ VGS = 1.8 V 4a 0.054 @ VGS = 1.5 V 4a D TrenchFETr Power MOSFET: 1.5–V Rated


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    Si5920DC 08-Apr-05 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


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    Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 PDF

    SC-89-6

    Abstract: SiB914
    Text: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry


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    VMN-PT0103-0802 SC-89-6 SiB914 PDF