Si6876BEDQ
Abstract: Si6876EDQ SI6876EDQT1E3
Text: Specification Comparison Vishay Siliconix Si6876BEDQ vs. Si6876EDQ Description: Bi-Directional N-Channel, 30 V D-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6876BEDQ-T1 Replaces Si6876EDQ-T1 Si6876BEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6876EDQ-T1-E3 (Lead (Pb)-free version)
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Si6876BEDQ
Si6876EDQ
Si6876BEDQ-T1
Si6876EDQ-T1
Si6876BEDQ-T1-E3
Si6876EDQ-T1-E3
09-Nov-06
SI6876EDQT1E3
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Si6876BEDQ
Abstract: No abstract text available
Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS
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Si6876BEDQ
Si6876BEDQ-T1--E3
S-40581--Rev.
29-Mar-04
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Si6876BEDQ
Abstract: No abstract text available
Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS
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Si6876BEDQ
Si6876BEDQ-T1--E3
18-Jul-08
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A1818
Abstract: No abstract text available
Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS
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Original
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Si6876BEDQ
Si6876BEDQ-T1--E3
08-Apr-05
A1818
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PDF
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SI6876BEDQ
Abstract: No abstract text available
Text: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS
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Original
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Si6876BEDQ
Si6876BEDQ-T1--E3
08-Apr-05
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