Si6876BEDQ
Abstract: Si6876EDQ SI6876EDQT1E3
Text: Specification Comparison Vishay Siliconix Si6876BEDQ vs. Si6876EDQ Description: Bi-Directional N-Channel, 30 V D-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6876BEDQ-T1 Replaces Si6876EDQ-T1 Si6876BEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6876EDQ-T1-E3 (Lead (Pb)-free version)
|
Original
|
Si6876BEDQ
Si6876EDQ
Si6876BEDQ-T1
Si6876EDQ-T1
Si6876BEDQ-T1-E3
Si6876EDQ-T1-E3
09-Nov-06
SI6876EDQT1E3
|
PDF
|
5G2R
Abstract: Si6876EDQ
Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rSS(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS
|
Original
|
Si6876EDQ
S-20462--Rev.
15-Apr-02
5G2R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS
|
Original
|
Si6876EDQ
08-Apr-05
|
PDF
|
Si6876EDQ
Abstract: No abstract text available
Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS
|
Original
|
Si6876EDQ
S-20802--Rev.
01-Jul-02
|
PDF
|
Si6876EDQ
Abstract: No abstract text available
Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS
|
Original
|
Si6876EDQ
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS
|
Original
|
Si6876EDQ
Temperatu40
S-20802--Rev.
01-Jul-02
|
PDF
|
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
|
Original
|
AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
|
PDF
|