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    SI6925DQ Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si6925DQ Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    Si6925DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6925DQ Vishay Intertechnology Dual N-Channel 20-V (D-S) Rated MOSFET Original PDF
    Si6925DQ SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI6925DQ-T1 Vishay Intertechnology Dual N-Channel 20-V (D-S) Rated MOSFET Original PDF

    SI6925DQ Datasheets Context Search

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    Si6925ADQ

    Abstract: Si6925DQ Si6925DQ-T1 SI6925ADQ-T1-E3
    Text: Specification Comparison Vishay Siliconix Si6925ADQ vs. Si6925DQ Description: Dual N-Channel, 2.5 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6925ADQ-T1 Replaces Si6925DQ-T1 Si6925ADQ-T1-E3 (Lead (Pb)-free version) Replaces Si6925DQ-T1-E3 (Lead (Pb)-free version)


    Original     		PDF Si6925ADQ Si6925DQ Si6925ADQ-T1 Si6925DQ-T1 Si6925ADQ-T1-E3 Si6925DQ-T1-E3 09-Nov-06

    Si6925DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6925DQ Dual N-Channel 20-V D-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF Si6925DQ

    Si6925DQ

    Abstract: No abstract text available
    Text: Si6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "3.4 0.06 @ VGS = 3.0 V "3.1 0.08 @ VGS = 2.5 V "2.7 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6925DQ G1 G2 Top View


    Original     		PDF Si6925DQ Junct25 S-49455--Rev. 17-Dec-96

    Si6925DQ

    Abstract: No abstract text available
    Text: Si6925DQ Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "3.4 0.06 @ VGS = 3.0 V "3.1 0.08 @ VGS = 2.5 V "2.7 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6925DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6925DQ S-49455--Rev. 17-Dec-96

    Si6925DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6925DQ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6925DQ 17-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: Si6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "3.4 0.06 @ VGS = 3.0 V "3.1 0.08 @ VGS = 2.5 V "2.7 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6925DQ G1 G2 Top View


    Original     		PDF Si6925DQ 08-Apr-05

    Si6925DQ

    Abstract: No abstract text available
    Text: Si6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "3.4 0.06 @ VGS = 3.0 V "3.1 0.08 @ VGS = 2.5 V "2.7 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6925DQ G1 G2 Top View


    Original     		PDF Si6925DQ 18-Jul-08

    LTC1981ES5

    Abstract: dual high side MOSFET driver with charge pump LTC1981 LTC1982 Si3442DV Si6925DQ 720 mosfet sot23 LTC1154
    Text: LTC1981/LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No External Components Required Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs Ultralow Power:


    Original     		PDF LTC1981/LTC1982 OT-23 LTC1982) LTC1981) OT-23 LTC1153/LTC1154 LTC1981ES5 dual high side MOSFET driver with charge pump LTC1981 LTC1982 Si3442DV Si6925DQ 720 mosfet sot23 LTC1154

    dual high side MOSFET driver with charge pump

    Abstract: 19812fs LTC1981 LTC1981ES5 LTC1982 Si3442DV Si6925DQ US1080 682 MARKING SOT-23 LTC1154
    Text: LTC1981/LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No External Components Required Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs Ultralow Power:


    Original     		PDF LTC1981/LTC1982 OT-23 LTC1982) LTC1981) OT-23 LTC1153/LTC1154 dual high side MOSFET driver with charge pump 19812fs LTC1981 LTC1981ES5 LTC1982 Si3442DV Si6925DQ US1080 682 MARKING SOT-23 LTC1154

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    dual high side MOSFET driver with charge pump

    Abstract: ltpf LTC1154 BD01 LTC1982 LTC1982ES6 Si3442DV Si6925DQ
    Text: Final Electrical Specifications LTC1982 Dual Micropower High Side Switch Controller in SOT-23 August 2000 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ No External Components Required VCC Range: 1.8V to 5V Internal Voltage Triplers Produce High Side


    Original     		PDF LTC1982 OT-23 OT-23 LTC1153/LTC1154 LTC1155/LTC1255 LTC1163/LTC1165 LTC1623 LTC1710 1982i dual high side MOSFET driver with charge pump ltpf LTC1154 BD01 LTC1982 LTC1982ES6 Si3442DV Si6925DQ

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    Zero Drift Amplifiers

    Abstract: LT1394 Transformer sepic A914BYW-4R7M D52LC JMK325BJ226MM LMK325BJ106MN LT1767 LTC1773 LTC1877
    Text: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products January 2001 LTC 3404: 1.4MHz Synchronous Buck Converter Delivers 95% Efficiency The LTC3404 is a 1.4MHz current mode monolithic synchronous step-down DC/DC capable of delivering up to 600mA


    Original     		PDF LTC3404 600mA LTC3404 Frequency--LTC3404/LT1767/LTC1773 LT1713 LT1394 LT1671. LT1714 1-800-4-LINEAR Zero Drift Amplifiers Transformer sepic A914BYW-4R7M D52LC JMK325BJ226MM LMK325BJ106MN LT1767 LTC1773 LTC1877

    Untitled

    Abstract: No abstract text available
    Text: SÌ6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET v » (V) H d SIOH) (Û ) A •d (A) 0.05 @ V GS = 4.5 V 0 .0 6 V q S = 3.0 V 0.08 @ V e s = 2.5 V Di Q D2 Q TSSOP-8 <J2 o -i Top View Ô s2 N -Channel MOSFET PARAMETER SYMBOL N-Channel MO SFET


    OCR Scan     		PDF 6925DQ 17-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ6925DQ S e m i c o n d u c t o r s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary Vd s (V) 20 rDS(on) ( S ) I d (A) 0.05 @ VGS = 4.5 V ± 3 .4 0.06 @ VGS = 3.0 V ± 3.1 0.08 @ VGS = 2.5 V ± 2 .7 O D-> O Ô Sj S2 N-Channel MOSFET N-Channel MOSFET


    OCR Scan     		PDF 6925DQ S-49455-- I7-Dec-96 17-Dec-96