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    Rochester Electronics LLC SI6953DQ

    MOSFET 2P-CH 20V 1.9A 8TSSOP
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    onsemi SI6953DQ

    MOSFET 20V/20V P-Channel Dual - Bulk (Alt: SI6953DQ)
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    Avnet Americas SI6953DQ Bulk 4 Weeks 1,106
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    Vishay Siliconix SI6953DQ-T1

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    Bristol Electronics SI6953DQ-T1 473
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    Fairchild Semiconductor Corporation SI6953DQ

    1.9 A, 20 V, 0.17 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
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    Quest Components SI6953DQ 2,397
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    Rochester Electronics SI6953DQ 1,500 1
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    SI6953DQ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI6953DQ Fairchild Semiconductor Dual 20V P-Channel PowerTrench MOSFET Original PDF
    Si6953DQ Fairchild Semiconductor Dual 20V P-Channel PowerTrench MOSFET Original PDF
    Si6953DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI6953DQ-T1 Vishay Intertechnology Dual P-Channel 20-V (D-S) MOSFET Original PDF

    SI6953DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET


    Original     		PDF Si6953DQ S-47958â 15-Apr-96

    Si6953DQ

    Abstract: No abstract text available
    Text: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si6953DQ S-47958--Rev. 15-Apr-96

    Si4947DY

    Abstract: Si6953DQ Si6955DQ Si9947DY Si9953DY
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ 51296--Rev. 18-Dec-96

    Si6953DQ

    Abstract: No abstract text available
    Text: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6953DQ

    Si6953DQ

    Abstract: Si9953DY
    Text: Si9953DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.25 @ VGS = -10 V "2.3 0.40 @ VGS = -4.5 V "1.5 Lower profile/smaller sizeĊsee LITE FOOTt equivalent: Si6953DQ S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3


    Original     		PDF Si9953DY Si6953DQ P-38796--Rev.

    Si6953DQ

    Abstract: No abstract text available
    Text: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si6953DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6953DQ

    Si6953DQ

    Abstract: No abstract text available
    Text: Si6953DQ Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.17 @ VGS = -10 V "1.9 0.32 @ VGS = -4.5 V "1.3 S1 S2 TSSOPĆ8 D1 S1 S1 G1 1 2 3 D 8 Si6953DQ 4 7 6 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 PĆChannel MOSFET


    Original     		PDF Si6953DQ S42910Rev.

    Si6953DQ

    Abstract: No abstract text available
    Text: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si6953DQ S-47958--Rev. 15-Apr-96

    Si9400DY

    Abstract: Si4947DY Si6953DQ
    Text: Si9400DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.5 0.40 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ S S SO-8 NC 1 8


    Original     		PDF Si9400DY Si4947DY Si6953DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: SI6953DQ Transistors Matched Pair of P-Channel Enhancement MOSFETs V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)1.9 I(DM) Max. (A) Pulsed I(D)1.5 @Temp (øC)70’ IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55


    Original     		PDF SI6953DQ

    Untitled

    Abstract: No abstract text available
    Text: Si6953DQ Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate


    Original     		PDF Si6953DQ

    Si4947DY

    Abstract: Si6953DQ Si9400DY
    Text: Si9400DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.5 0.40 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ S S SO-8 NC 1 8


    Original     		PDF Si9400DY Si4947DY Si6953DQ S-47958--Rev. 15-Apr-96

    Si6953DQ

    Abstract: No abstract text available
    Text: Si6953DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6953DQ G1 G2 Top View D1 D2 P-Channel MOSFET


    Original     		PDF Si6953DQ S-00652--Rev. 27-Mar-00

    SI9953dy dual mosfet

    Abstract: Si4947DY Si6953DQ Si6955DQ Si9947DY Si9953DY
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ or Si6955DQ


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ S-47958--Rev. 15-Apr-96 SI9953dy dual mosfet

    Si9947DY

    Abstract: Si9953DY Si4947DY Si6953DQ Si6955DQ si6953
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ 51296--Rev. 18-Dec-96 si6953

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
    Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone


    Original     		PDF U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM U3810BM U4030B U4030B JFET TRANSISTOR REPLACEMENT GUIDE j201 UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band

    tssop-8

    Abstract: No abstract text available
    Text: SINGLE & DUAL N & P CHANNEL MOSFETS µPA1800 SERIES, TSSOP-8 • DRAIN CURRENTS UP TO 13A IN SOP-8 AND TSSOP-8 PACKAGES • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 2.5V SINGLE N & P CHANNEL MOSFETS • • • The latest comprehensive data to fully support these parts is readily available.


    Original     		PDF PA1800 PA1801 PA1802 PA1810 PA1813 PA1811 PA1812 uPA1800 IRF7503 tssop-8