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    9463

    Abstract: 9622 AN609 Si7316DN
    Text: Si7316DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7316DN AN609 10-Sep-07 9463 9622 PDF

    Si7316DN

    Abstract: si7316
    Text: SPICE Device Model Si7316DN Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7316DN 18-Jul-08 si7316 PDF