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    SI7495DP Search Results

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    SI7495DP Price and Stock

    Vishay Siliconix SI7495DP-T1-E3

    MOSFET P-CH 12V 13A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7495DP-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.45
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    Quest Components SI7495DP-T1-E3 2,188
    • 1 $3.6
    • 10 $3.6
    • 100 $3.6
    • 1000 $1.44
    • 10000 $1.32
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    SI7495DP-T1-E3 2,188
    • 1 $3.6
    • 10 $3.6
    • 100 $3.6
    • 1000 $1.44
    • 10000 $1.32
    		Buy Now

    Vishay Siliconix SI7495DP-T1-GE3

    MOSFET P-CH 12V 13A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7495DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.45
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    Vishay Intertechnologies SI7495DP-T1

    TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,13A I(D),LLCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI7495DP-T1 1,194
    • 1 $3.6
    • 10 $3.6
    • 100 $3.6
    • 1000 $1.44
    • 10000 $1.44
    		Buy Now

    SI7495DP Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7495DP Vishay Siliconix MOSFETs Original PDF
    Si7495DP SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    SI7495DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 13A PPAK 8SOIC Original PDF
    SI7495DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 13A PPAK 8SOIC Original PDF

    SI7495DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7495DP

    Abstract: No abstract text available
    Text: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V


    Original     		PDF Si7495DP 07-mm Si7495DP-T1 S-31417--Rev. 07-Jul-03

    Si7495DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7495DP 27-Jun-03

    Untitled

    Abstract: No abstract text available
    Text: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7495DP Si7495DP-T1 Si7495DP-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7495DP New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V


    Original     		PDF Si7495DP 07-mm Si7495DP-T1 S-31417--Rev. 07-Jul-03

    Untitled

    Abstract: No abstract text available
    Text: Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 - 12 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7495DP Si7495DP-T1-E3 Si7495DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7495DP

    Abstract: No abstract text available
    Text: Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 - 12 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7495DP Si7495DP-T1-E3 Si7495DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V


    Original     		PDF Si7495DP 07-mm Si7495DP-T1 08-Apr-05

    Si7495DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7495DP 18-Jul-08

    Si7495DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7495DP S-52398Rev. 21-Nov-05

    Untitled

    Abstract: No abstract text available
    Text: Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 - 12 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7495DP Si7495DP-T1-E3 Si7495DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    transistor 9529

    Abstract: AN609 Si7495DP
    Text: Si7495DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7495DP AN609 26-Jul-07 transistor 9529

    Untitled

    Abstract: No abstract text available
    Text: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.00655 at VGS = – 4.5 V – 21 0.008 at VGS = – 2.5 V – 19 0.011 at VGS = – 1.8V – 16 – 12 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7495DP 07-mm Si7495DP-T1 Si7495DP-T1--E3 08-Apr-05

    Si7495DP

    Abstract: rthjc
    Text: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7495DP Si7495DP-T1 Si7495DP-T1-E3 S-52554-Rev. 03-Apr-06 rthjc

    Untitled

    Abstract: No abstract text available
    Text: Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 - 12 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7495DP Si7495DP-T1-E3 Si7495DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    ltcfc

    Abstract: LTC4416 transistor marking r2c LTC4416-1 LTC4416EMS SOT23 transistor R2C ltcps marking g1 zener+diode+sr+4416
    Text: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Designed Specifically to Drive Large and Small QG PFETs Very Low Loss Replacement for Power Supply OR’ing Diodes


    Original     		PDF LTC4416/LTC4416-1 10-Lead LTC4413 LTC4414 4416f ltcfc LTC4416 transistor marking r2c LTC4416-1 LTC4416EMS SOT23 transistor R2C ltcps marking g1 zener+diode+sr+4416

    ltcfc

    Abstract: LTC4416
    Text: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Designed Specifically to Drive Large and Small QG PFETs Very Low Loss Replacement for Power Supply OR’ing Diodes


    Original     		PDF LTC4416/LTC4416-1 10-Ln LTC4413 LTC4414 4416fa ltcfc LTC4416

    ltcfc

    Abstract: LTC4416 LTC4416-1 Marking R2E r2c transistor R2C marking R2E SOT23 LTC4416EMS LTC4416IMS marking r2c
    Text: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO FEATURES U Designed Specifically to Drive Large and Small QG PFETs • Very Low Loss Replacement for Power Supply OR’ing Diodes ■ Wide Operating Voltage Range: 3.6V to 36V


    Original     		PDF LTC4416/LTC4416-1 10-Lead LTC4413 LTC4414 4416fa ltcfc LTC4416 LTC4416-1 Marking R2E r2c transistor R2C marking R2E SOT23 LTC4416EMS LTC4416IMS marking r2c

    MTBF fit IGBT 1200

    Abstract: LTC4416
    Text: Application Notes SPECIFICATION CHECKLIST Use this checklist to help you define your specification. If you can’t find a converter that fulfils your needs then call us, fax us, e-mail us or use our Web Sample Enquiry link and we will find the best match for you.


    Original     		PDF R-78Axx-xxSMD R-78AAxx-xxSMD RSZ-0505 EIA-481-2 MTBF fit IGBT 1200 LTC4416