specifications of MOSFET
Abstract: No abstract text available
Text: SPICE Device Model Si7678DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7678DP
18-Jul-08
specifications of MOSFET
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4802
Abstract: AN609
Text: Si7678DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7678DP
AN609
20-Jun-07
4802
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SI7678DP-T1-E3
Abstract: a32g
Text: New Product Si7678DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 75 0.0125 at VGS = 10 V 32g 39 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS
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Si7678DP
Si7678DP-T1-E3
08-Apr-05
a32g
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7678DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si7678DP
S-71679Rev.
27-Aug-07
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Si7678DP-T1-E3
Abstract: si7678
Text: New Product Si7678DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 75 0.0125 at VGS = 10 V 32g 39 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS
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Original
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PDF
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Si7678DP
Si7678DP-T1-E3
18-Jul-08
si7678
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