AN609
Abstract: Si7909DN
Text: Si7909DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7909DN
AN609
08-Aug-07
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Si7909DN
Abstract: No abstract text available
Text: SPICE Device Model Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7909DN
18-Jul-08
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Si7909DN
Abstract: 77A19
Text: SPICE Device Model Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7909DN
29-Mar-03
77A19
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Si7909DN
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.037 at VGS = – 4.5 V – 7.7 0.048 at VGS = – 2.5 V – 6.8 0.068 at VGS = – 1.8 V – 5.7 • TrenchFET Power MOSFETS: 1.8-V Rated
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Si7909DN
S-51210
27-Jun-05
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Si7909DN
Abstract: No abstract text available
Text: Si7909DN New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.037 @ VGS = -4.5 V -7.7 0.048 @ VGS = -2.5 V - 6.8 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt Package D Advanced High Cell Density Process
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Si7909DN
S-22122--Rev.
25-Nov-02
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Si7909DN
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 7.7 0.048 at VGS = - 2.5 V - 6.8 0.068 at VGS = - 1.8 V - 5.7 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Si7909DN
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.037 at VGS = – 4.5 V – 7.7 0.048 at VGS = – 2.5 V – 6.8 0.068 at VGS = – 1.8 V – 5.7 • TrenchFET Power MOSFETS: 1.8-V Rated
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Si7909DN
Si7909DN-T1
Si790s
08-Apr-05
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Si7909DN
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.037 @ VGS = –4.5 V –7.7 0.048 @ VGS = –2.5 V –6.8 0.068 @ VGS = –1.8 V –5.7 • TrenchFET Power MOSFETS: 1.8-V Rated
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Si7909DN
S-51210
27-Jun-05
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Untitled
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 7.7 0.048 at VGS = - 2.5 V - 6.8 0.068 at VGS = - 1.8 V - 5.7 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Si7909DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.037 @ VGS = –4.5 V –7.7 0.048 @ VGS = –2.5 V –6.8 0.068 @ VGS = –1.8 V –5.7 • TrenchFET Power MOSFETS: 1.8-V Rated
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Si7909DN
Si7909DN-T1
08-Apr-05
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Si7909DN
Abstract: No abstract text available
Text: SPICE Device Model Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7909DN
S-60244Rev.
20-Feb-06
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Untitled
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 7.7 0.048 at VGS = - 2.5 V - 6.8 0.068 at VGS = - 1.8 V - 5.7 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Si7909DN
Si7909DN-T1-E3
Si7909DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 7.7 0.048 at VGS = - 2.5 V - 6.8 0.068 at VGS = - 1.8 V - 5.7 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Si7909DN
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7909DN Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 7.7 0.048 at VGS = - 2.5 V - 6.8 0.068 at VGS = - 1.8 V - 5.7 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Si7909DN
Si7909DN-T1-E3
Si7909DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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