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    SI8817DB Price and Stock

    Vishay Intertechnologies SI8817DB-T2-E1

    Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8817DB-T2-E1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI8817DB-T2-E1 Reel 20 Weeks 3,000
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    • 10000 $0.13425
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    Mouser Electronics SI8817DB-T2-E1 72,334
    • 1 $0.45
    • 10 $0.362
    • 100 $0.27
    • 1000 $0.171
    • 10000 $0.133
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    Newark SI8817DB-T2-E1 Cut Tape 2,495 5
    • 1 $0.478
    • 10 $0.394
    • 100 $0.298
    • 1000 $0.298
    • 10000 $0.298
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    SI8817DB-T2-E1 Reel 3,000
    • 1 $0.181
    • 10 $0.181
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    • 1000 $0.181
    • 10000 $0.164
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    TTI SI8817DB-T2-E1 Reel 9,000 3,000
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    • 10000 $0.132
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    EBV Elektronik SI8817DB-T2-E1 21 Weeks 3,000
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    Vishay Siliconix SI8817DB-T2-E1

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    Bristol Electronics SI8817DB-T2-E1 195 13
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    • 100 $0.2681
    • 1000 $0.1547
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    Quest Components SI8817DB-T2-E1 156
    • 1 $0.55
    • 10 $0.44
    • 100 $0.275
    • 1000 $0.275
    • 10000 $0.275
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    SI8817DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8817DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V MICROFOOT Original PDF

    SI8817DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8817DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.076 at VGS = -4.5 V -2.9 0.100 at VGS = -2.5 V -2.5 0.145 at VGS = -1.8 V -2.1 0.320 at VGS = -1.5 V -0.5 MICRO FOOT 0.8 x 0.8


    Original     		PDF Si8817DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si88

    Abstract: si8817
    Text: Si8817DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.076 at VGS = - 4.5 V - 2.9 0.100 at VGS = - 2.5 V - 2.5 0.145 at VGS = - 1.8 V - 2.1 0.320 at VGS = - 1.5 V - 0.5 VDS (V)


    Original     		PDF Si8817DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si88 si8817

    Untitled

    Abstract: No abstract text available
    Text: Si8817DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.076 at VGS = - 4.5 V - 2.9 0.100 at VGS = - 2.5 V - 2.5 0.145 at VGS = - 1.8 V - 2.1 0.320 at VGS = - 1.5 V - 0.5 VDS (V)


    Original     		PDF Si8817DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: COMPONENTS FOR THE INTERNET OF THINGS Touching the Human Body In the Home VISHAY and the INTERNET of THINGS IoT Vishay has stepped up to the challenges of the Internet of Things (IoT) with a broad portfolio of unique passive and active solutions. These best-in-class components are optimally suited for the “Things” being


    Original     		PDF VMN-MS6975-1502

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402