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Vishay Intertechnologies SI9407AEY
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Vishay Siliconix SI9407AEY
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Quest Components	SI9407AEY		64			1 $2.79 10 $2.79 100 $1.5345 1000 $1.5345 10000 $1.5345	Buy Now
	SI9407AEY		64			1 $2.79 10 $2.79 100 $1.5345 1000 $1.5345 10000 $1.5345	Buy Now
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ComSIT USA	SI9407AEY		1,875			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others SI9407AEYT1E3 AVAILABLE EU
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ComSIT USA	SI9407AEYT1E3		24,375			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SILI SI9407AEYT1 Electronic Component
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ComSIT USA	SI9407AEYT1		259			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI9407AEY Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
Si9407AEY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI9407AEY	Vishay	FET: P CHANNEL, 60V, 3.5A, 0.12 OHM, PACKAGE SO8	Original	PDF
Si9407AEY	Vishay Intertechnology	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Vishay Siliconix	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Vishay Telefunken	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Siliconix	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Mosfet, P-Channel, -60, Dual, Pkg Style, SO-8	Scan	PDF
SI9407AEY-DS	Vishay Telefunken	DS-Spice Model for Si9407AEY	Original	PDF
Si9407AEY SPICE Device Model	Vishay	P-Channel 50-V (D-S) MOSFET	Original	PDF
SI9407AEY-T1	Vishay Intertechnology	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF

SI9407AEY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
C 6090 Abstract: AN609 Si9407AEY Text: Si9407AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si9407AEY AN609 17-Jan-06 C 6090	PDF
Si9407AEY Abstract: Si9407AEY SPICE Device Model Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9407AEY capacita30V, 05-Nov-99 Si9407AEY SPICE Device Model	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available	Original	Si9407AEY Si9407AEY--T1 Si9407AEY--E3 08-Apr-05	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
27k ohm resistor Abstract: 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 Si9407AEY 27k capacitor capacitor 1uF 15V data sheet of resistor 33k Text: 13.5V to 16.5V INPUT 1 C1 0.47uF 2 R2 27k C2 27nF 10 V+ C5 4.7uF 25V X5R VL EXT FREQ MAX1846 R1 150k 300kHz 3 CS PGND 4 FB REF GND 6 P1 Si9407AEY 0.15Ohm 9 -15V @ 0.25A L1 150uH DO5022P -154 8 0.25Ohm COMP C3 56pF C4 0.1uF R3 33k 7 5 D1 EC10 QS04 C6 10uF	Original	MAX1846 300kHz) Si9407AEY 15Ohm 150uH DO5022P 25Ohm 1846-15c 55mVpp 27k ohm resistor 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 27k capacitor capacitor 1uF 15V data sheet of resistor 33k	PDF
Si9407AEY Abstract: DSA0016549 Text: Si9407AEY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si9407AEY S-53709--Rev. 04-Aug-97 DSA0016549	PDF
Si9407AEY Abstract: 99445 Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si9407AEY S-99445--Rev. 29-Nov-99 99445	PDF
Si9407AEY Abstract: 150CA Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available	Original	Si9407AEY Si9407AEY--T1 Si9407AEY--E3 150CA	PDF
Si9407AEY Abstract: No abstract text available Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9407AEY 18-Jul-08	PDF
Si9407AEY-T1-E3 Abstract: Si9407AEY-T1-GE3 Si9407AEY Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 18-Jul-08	PDF
Si9407AEY-T1-E3 Abstract: Si9407AEY Si9407AEY-T1-GE3 Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 11-Mar-11	PDF
us1035 Abstract: Si9407AEY Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 11-Mar-11 us1035	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available	Original	Si9407AEY Si9407AEY--T1 Si9407AEY--E3 S-50366--Rev. 28-Feb-05	PDF

Si9407AEY Abstract: SI9407AEY-T1-E3 SI9407AEY-T1 Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available	Original	Si9407AEY Si9407AEY--T1 Si9407AEY--E3 18-Jul-08 SI9407AEY-T1-E3 SI9407AEY-T1	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Siliconix P-Channel 60-V D-S , 175_C MOSFET New Product Product Summary VDS (V) –60 60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si9407AEY S-57253--Rev. 24-Feb-98	PDF
Si9407AEY Abstract: No abstract text available Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9407AEY S-52519Rev. 12-Dec-05	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 –60 S S S SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si9407AEY S-99445--Rev. 29-Nov-99	PDF
si9470 Abstract: SLMA002 TPS40060 TPS40060PWP TPS40060PWPR TPS40061 TPS40061PWP Si947 powerPAD Text: TPS40060 TPS40061 8 www.ti.com SLUS543A – DECEMBER 2002 – REVISED FEBRUARY 2003 WIDEĆINPUT SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 10 V to 55 V D Input Voltage Feed-Forward Compensation D 0.5% Internal 0.7-V Reference D Programmable Fixed-Frequency, Up to 1-MHz	Original	TPS40060 TPS40061 SLUS543A 16-Pin TPS40060 TPS40061 si9470 SLMA002 TPS40060PWP TPS40060PWPR TPS40061PWP Si947 powerPAD	PDF
5a6 zener diode Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical	Original	Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415	PDF
SDCFB Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101 Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor	Original	SC141D SI4480DY SMBJ12CA SN7474N SI4410DY-REVA SLOP114 SN7432N SN74ALS05AN SI4412DY SLVP097 SDCFB sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
48222R Abstract: H. Dean Venable Text: TPS40060 TPS40061 8 www.ti.com SLUS543 – DECEMBER 2002 WIDEĆINPUT SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 10 V to 55 V D Input Voltage Feed-Forward Compensation D 0.5% Internal 0.7-V Reference D Programmable Fixed-Frequency, Up to 1-MHz	Original	TPS40060 TPS40061 SLUS543 TPS40061 48222R H. Dean Venable	PDF
Untitled Abstract: No abstract text available Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)	OCR Scan	Si9407AEY S-57253â 24-Feb-98 S2SM735 DD17flflT	PDF

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SI9407AEY Datasheets (9)

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Si9407AEY

C 6090

Si9407AEY

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27k ohm resistor

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Si9407AEY

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Si9407AEY-T1-E3

Si9407AEY-T1-E3

us1035

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Si9407AEY

Si9407AEY

Si9407AEY

si9470

5a6 zener diode

SDCFB

FSQ510 Equivalent

48222R

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